Effect of tunneling current on schottky barrier height in ZnO varistors at low temperature

Chinese Physics Letters

Volumn 26, Issue 7, 2009, Pages

  Sheng Tao, Li ^a   Yan, Yang ^a   Le, Zhang ^a   Peng Fei, Cheng ^a   Jian Ying, L ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; EQUIVALENT CIRCUITS; II-VI SEMICONDUCTORS; SCHOTTKY BARRIER DIODES; TEMPERATURE DISTRIBUTION; VARISTORS; ZINC OXIDE;

BARRIER HEIGHTS; EMISSION MODEL; LOWS-TEMPERATURES; MEASURED CURRENTS; SCHOTTKY BARRIERS; SCHOTTKY-BARRIER HEIGHTS; TEMPERATURE DEPENDENCE; TUNNELING CURRENT; WIDE TEMPERATURE RANGES; ZNO VARISTORS;

THERMIONIC EMISSION;

EID: 68449093435     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/26/7/077201     Document Type: Article

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