Fundamental theory of piezotronics

Advanced Materials

Volumn 23, Issue 27, 2011, Pages 3004-3013

  Zhang, Yan ^a   Liu, Ying ^a   Wang, Zhong Lin ^a  

^a Georgia Institute of Technology   (United States)

Author keywords

field effect transistors; piezoelectric effects; piezoelectric materials

Indexed keywords

ANALYTICAL SOLUTIONS; COMPLIMENTARY METAL OXIDE SEMICONDUCTORS; DEVICE DESIGN; ELECTRONIC DEVICE; FRAME-WORK; FUNDAMENTAL THEORY; GATE VOLTAGES; HUMAN-COMPUTER; METAL-SEMICONDUCTOR CONTACTS; METAL/SEMICONDUCTOR INTERFACE; NUMERICAL CALCULATION; P-N JUNCTION; PIEZO-ELECTRIC EFFECTS; PIEZOELECTRIC POTENTIAL; WORKING PRINCIPLES; ZNO; ZNO NANOWIRES;

CRYSTAL SYMMETRY; CURRENT VOLTAGE CHARACTERISTICS; DESIGN; ELECTRON DEVICES; EQUIPMENT; FIELD EFFECT SEMICONDUCTOR DEVICES; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; MEMS; METALLIC COMPOUNDS; METALS; MICROELECTROMECHANICAL DEVICES; MOS DEVICES; NANOROBOTICS; NANOWIRES; PIEZOELECTRICITY; PRESSURE EFFECTS; TRANSISTORS; ZINC OXIDE;

SEMICONDUCTOR JUNCTIONS;

METAL; NANOWIRE; ZINC OXIDE;

ARTICLE; CHEMISTRY; SEMICONDUCTOR; THEORETICAL MODEL;

METALS; MODELS, THEORETICAL; NANOWIRES; SEMICONDUCTORS; ZINC OXIDE;

EID: 79960446901     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201100906     Document Type: Article

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