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Volumn 55, Issue , 2014, Pages 101-106

Increased reliability for J0-analysis by QSSPC

Author keywords

Band gap narrowing; Dark saturation current density; Lifetime; Qsspc; Silicon

Indexed keywords


EID: 84922332674     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2014.08.087     Document Type: Conference Paper
Times cited : (34)

References (11)
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  • 3
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    • Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors
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    • Sproul, A.B.1
  • 4
    • 33845421788 scopus 로고    scopus 로고
    • General parameterization of auger recombination in crystalline silicon
    • M. J. Kerr and A. Cuevas, "General parameterization of Auger recombination in crystalline silicon", Journal of Applied Physics 91, p. 2473- 80 (2002).
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    • Kerr, M.J.1    Cuevas, A.2
  • 5
    • 84867467918 scopus 로고    scopus 로고
    • Improved quantitative description of auger recombination in crystalline silicon
    • A. Richter, S. W. Glunz, F. Werner, J. Schmidt and A. Cuevas, "Improved quantitative description of Auger recombination in crystalline silicon", Physical Review B 86, p. 1-14 (2012).
    • (2012) Physical Review B , vol.86 , pp. 1-14
    • Richter, A.1    Glunz, S.W.2    Werner, F.3    Schmidt, J.4    Cuevas, A.5
  • 6
    • 0013226142 scopus 로고    scopus 로고
    • Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation
    • A. Schenk, "Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation", Journal of Applied Physics 84, p. 3684-95 (1998).
    • (1998) Journal of Applied Physics , vol.84 , pp. 3684-3695
    • Schenk, A.1
  • 7
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    • Modelling carrier recombination in highly phosphorus-doped industrial emitters
    • A. Kimmerle, A. Wolf, U. Belledin and B. Biro, "Modelling carrier recombination in highly phosphorus-doped industrial emitters", Energy Procedia 8, p. 275-81 (2011).
    • (2011) Energy Procedia , vol.8 , pp. 275-281
    • Kimmerle, A.1    Wolf, A.2    Belledin, U.3    Biro, B.4
  • 9
    • 84922330107 scopus 로고    scopus 로고
    • Sentaurus TCAD, Zürich, Switzerland
    • Sentaurus TCAD, release E-2010.12, Synopsys, Zürich, Switzerland.
    • Release E-2010.12, Synopsys
  • 10
    • 84908461763 scopus 로고    scopus 로고
    • Implementation of fermi-dirac statistics and advanced models in pc1d for precise simulations of silicon solar cells
    • to be published
    • H. Haug, A. Kimmerle, J. Greulich, A. Wolf and E. S. Marstein, "Implementation of Fermi-Dirac statistics and advanced models in PC1D for precise simulations of silicon solar cells", Solar Energy Materials and Solar Cells, p. to be published (2014).
    • (2014) Solar Energy Materials and Solar Cells
    • Haug, H.1    Kimmerle, A.2    Greulich, J.3    Wolf, A.4    Marstein, E.S.5
  • 11
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    • Modelling silicon characterisation
    • A. Cuevas, "Modelling silicon characterisation", Energy Procedia 8, p. 94-99 (2011).
    • (2011) Energy Procedia , vol.8 , pp. 94-99
    • Cuevas, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.