-
1
-
-
0026899612
-
A unified mobility model for device simulation - I. Model equations and concentration dependence
-
D.B.M. Klaassen A unified mobility model for device simulation - I. Model equations and concentration dependence Solid-State Electron. 35 1992 953 959
-
(1992)
Solid-State Electron.
, vol.35
, pp. 953-959
-
-
Klaassen, D.B.M.1
-
2
-
-
57049138781
-
Effect of compensation and of metallic impurities on the electrical properties of Cz-grown solar grade silicon
-
J. Libal, S. Novaglia, M. Acciarri, R. Petres, J. Arumughan, R. Kopecek, and A. Prokopenko Effect of compensation and of metallic impurities on the electrical properties of Cz-grown solar grade silicon J. Appl. Phys. 104 2008 104507
-
(2008)
J. Appl. Phys.
, vol.104
, pp. 104507
-
-
Libal, J.1
Novaglia, S.2
Acciarri, M.3
Petres, R.4
Arumughan, J.5
Kopecek, R.6
Prokopenko, A.7
-
3
-
-
80755176928
-
Conductivity mobility and Hall mobility in Compensated multicrystalline silicon
-
Valencia, Spain
-
F. Schindler, J. Geilker, W. Kwapil, J.A. Giesecke, M.C. Schubert, W. Warta, Conductivity mobility and Hall mobility in Compensated multicrystalline silicon, in: Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, 2010, pp. 2364-2368.
-
(2010)
Proceedings of the 25th European Photovoltaic Solar Energy Conference
, pp. 2364-2368
-
-
Schindler, F.1
Geilker, J.2
Kwapil, W.3
Giesecke, J.A.4
Schubert, M.C.5
Warta, W.6
-
4
-
-
77950300412
-
Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation
-
J. Veirman, S. Dubois, N. Enjalbert, J.P. Garandet, D.R. Heslinga, and M. Lemiti Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation Solid-State Electron. 54 2010 671
-
(2010)
Solid-State Electron.
, vol.54
, pp. 671
-
-
Veirman, J.1
Dubois, S.2
Enjalbert, N.3
Garandet, J.P.4
Heslinga, D.R.5
Lemiti, M.6
-
5
-
-
79952689597
-
Ga co-doping in Cz-grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications
-
M. Forster, E. Fourmond, R. Einhaus, H. Lauvray, J. Kraiem, and M. Lemiti Ga co-doping in Cz-grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications Phys. Status Solidi (c) 8 2011 678 681
-
(2011)
Phys. Status Solidi (C)
, vol.8
, pp. 678-681
-
-
Forster, M.1
Fourmond, E.2
Einhaus, R.3
Lauvray, H.4
Kraiem, J.5
Lemiti, M.6
-
6
-
-
80052086173
-
Electrical properties of boron, phosphorus and gallium co-doped silicon
-
E. Fourmond, M. Forster, R. Einhaus, H. Lauvray, J. Kraiem, and M. Lemiti Electrical properties of boron, phosphorus and gallium co-doped silicon Energy Procedia 8 2011 349 354
-
(2011)
Energy Procedia
, vol.8
, pp. 349-354
-
-
Fourmond, E.1
Forster, M.2
Einhaus, R.3
Lauvray, H.4
Kraiem, J.5
Lemiti, M.6
-
7
-
-
79952666469
-
Carrier mobilities in multicrystalline silicon wafers made from UMG-Si
-
B. Lim, M. Wolf, and J. Schmidt Carrier mobilities in multicrystalline silicon wafers made from UMG-Si Phys. Status Solidi C 8 2011 835 838
-
(2011)
Phys. Status Solidi C
, vol.8
, pp. 835-838
-
-
Lim, B.1
Wolf, M.2
Schmidt, J.3
-
8
-
-
84857871599
-
Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon
-
M. Forster, A. Cuevas, E. Fourmond, F.E. Rougieux, and M. Lemiti Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon J. Appl. Phys. 111 2012 043701 043707
-
(2012)
J. Appl. Phys.
, vol.111
, pp. 043701-043707
-
-
Forster, M.1
Cuevas, A.2
Fourmond, E.3
Rougieux, F.E.4
Lemiti, M.5
-
10
-
-
84865476340
-
Modeling majority carrier mobility in compensated crystalline silicon for solar cells
-
F. Schindler, M.C. Schubert, A. Kimmerle, J. Broisch, S. Rein, W. Kwapil, and W. Warta Modeling majority carrier mobility in compensated crystalline silicon for solar cells Sol. Energy Mater. Sol. Cells 106 2012 31 36
-
(2012)
Sol. Energy Mater. Sol. Cells
, vol.106
, pp. 31-36
-
-
Schindler, F.1
Schubert, M.C.2
Kimmerle, A.3
Broisch, J.4
Rein, S.5
Kwapil, W.6
Warta, W.7
-
11
-
-
84871786210
-
Incomplete ionization and carrier mobility in compensated p-type and n-type silicon
-
M. Forster, F.E. Rougieux, A. Cuevas, B. Dehestru, A. Thomas, E. Fourmond, and M. Lemiti Incomplete ionization and carrier mobility in compensated p-type and n-type silicon IEEE J. Photovolt. 3 2013 108 113
-
(2013)
IEEE J. Photovolt.
, vol.3
, pp. 108-113
-
-
Forster, M.1
Rougieux, F.E.2
Cuevas, A.3
Dehestru, B.4
Thomas, A.5
Fourmond, E.6
Lemiti, M.7
-
12
-
-
84896751863
-
Effect of dopant compensation on the temperature dependence of the transport properties in p-type monocrystalline silicon
-
J. Veirman, B. Martel, S. Dubois, and J. Stendera Effect of dopant compensation on the temperature dependence of the transport properties in p-type monocrystalline silicon J. Appl. Phys. 115 2014 083703
-
(2014)
J. Appl. Phys.
, vol.115
, pp. 083703
-
-
Veirman, J.1
Martel, B.2
Dubois, S.3
Stendera, J.4
-
13
-
-
0009509593
-
Carrier mobilities in silicon empirically related to doping and field
-
D.M. Caughey, and R.E. Thomas Carrier mobilities in silicon empirically related to doping and field Proc. IEEE 55 1967 2192 2193
-
(1967)
Proc. IEEE
, vol.55
, pp. 2192-2193
-
-
Caughey, D.M.1
Thomas, R.E.2
-
14
-
-
0026899752
-
A unified mobility model for device simulation - II. Temperature dependence of carrier mobility and lifetime
-
D.B.M. Klaassen A unified mobility model for device simulation - II. Temperature dependence of carrier mobility and lifetime Solid State Electron. 35 1992 961 967
-
(1992)
Solid State Electron.
, vol.35
, pp. 961-967
-
-
Klaassen, D.B.M.1
-
15
-
-
84908440978
-
Resistivity, doping concentrations and carrier mobilities in compensated n- and p-type Czochralski silicon: Comparison of measurements and simulations and consistent description of material parameters
-
J. Broisch, F. Schindler, M.C. Schubert, A.-K. Soiland, F. Fertig, and S. Rein Resistivity, doping concentrations and carrier mobilities in compensated n- and p-type Czochralski silicon: comparison of measurements and simulations and consistent description of material parameters to be published 2014
-
(2014)
To Be Published
-
-
Broisch, J.1
Schindler, F.2
Schubert, M.C.3
Soiland, A.-K.4
Fertig, F.5
Rein, S.6
-
16
-
-
80052419386
-
Hall mobility in multicrystalline silicon
-
F. Schindler, J. Geilker, W. Kwapil, W. Warta, and M.C. Schubert Hall mobility in multicrystalline silicon J. Appl. Phys. 110 2011 043722
-
(2011)
J. Appl. Phys.
, vol.110
, pp. 043722
-
-
Schindler, F.1
Geilker, J.2
Kwapil, W.3
Warta, W.4
Schubert, M.C.5
-
17
-
-
0039997031
-
Acoustic and optical-phonon-limited mobilities in p-type silicon within the deformation-potential theory
-
F. Szmulowicz Acoustic and optical-phonon-limited mobilities in p-type silicon within the deformation-potential theory Appl. Phys. Lett. 43 1983 485 487
-
(1983)
Appl. Phys. Lett.
, vol.43
, pp. 485-487
-
-
Szmulowicz, F.1
-
18
-
-
0020193861
-
Temperature dependence of the Hall factor and the conductivity mobility in p-type silicon
-
W.C. Mitchel, and P.M. Hemenger Temperature dependence of the Hall factor and the conductivity mobility in p-type silicon J. Appl. Phys. 53 1982 6880 6884
-
(1982)
J. Appl. Phys.
, vol.53
, pp. 6880-6884
-
-
Mitchel, W.C.1
Hemenger, P.M.2
-
19
-
-
0005593223
-
Calculation of the mobility and the Hall factor for doped p-type silicon
-
F. Szmulowicz Calculation of the mobility and the Hall factor for doped p-type silicon Phys. Rev. B 34 1986 4031 4047
-
(1986)
Phys. Rev. B
, vol.34
, pp. 4031-4047
-
-
Szmulowicz, F.1
|