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Volumn 48, Issue 33, 2015, Pages
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Preparation, characterization, and electrical properties of epitaxial NbO2 thin film lateral devices
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Author keywords
metal insulator transition; NbO2; thin films
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Indexed keywords
ALUMINA;
ALUMINUM OXIDE;
ELECTRIC FIELDS;
FILM PREPARATION;
LIGHT ABSORPTION;
METAL INSULATOR BOUNDARIES;
METAL INSULATOR TRANSITION;
NIOBIUM OXIDE;
PULSED LASER DEPOSITION;
SEMICONDUCTOR INSULATOR BOUNDARIES;
X RAY PHOTOELECTRON SPECTROSCOPY;
CRYSTALLINE QUALITY;
GRADUAL TRANSFORMATIONS;
IRREVERSIBLE TRANSITION;
LOW-RESISTANCE STATE;
NBO2;
OPTICAL ABSORPTION MEASUREMENT;
REVERSIBLE TRANSITIONS;
THRESHOLD SWITCHING;
THIN FILMS;
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EID: 84938898799
PISSN: 00223727
EISSN: 13616463
Source Type: Journal
DOI: 10.1088/0022-3727/48/33/335308 Document Type: Article |
Times cited : (43)
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References (41)
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