메뉴 건너뛰기




Volumn 48, Issue 33, 2015, Pages

Preparation, characterization, and electrical properties of epitaxial NbO2 thin film lateral devices

Author keywords

metal insulator transition; NbO2; thin films

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ELECTRIC FIELDS; FILM PREPARATION; LIGHT ABSORPTION; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; NIOBIUM OXIDE; PULSED LASER DEPOSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84938898799     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/48/33/335308     Document Type: Article
Times cited : (43)

References (41)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.