Threshold-switching characteristics of a nanothin-NbO2-layer- based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

Microelectronic Engineering

Volumn 107, Issue , 2013, Pages 33-36

  Kim, Seonghyun ^a   Park, Jubong ^a   Woo, Jiyong ^b   Cho, Chunhum ^a   Lee, Wootae ^a   Shin, Jungho ^a   Choi, Godeuni ^b   Park, Sangsu ^a   Lee, Daeseok ^b   Lee, Byoung Hun ^a   Hwang, Hyunsang ^a,b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

NbO2 threshold switching; Resistive memory (ReRAM); Selection device

Indexed keywords

DEGREE OF STABILITY; RESISTIVE MEMORY; RESISTIVE MEMORY (RERAM); RESISTIVE SWITCHING MEMORY; SELECTION DEVICES; SWITCHING BEHAVIORS; THRESHOLD SWITCHING; TYPE STRUCTURES;

METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; PLATINUM; SWITCHING;

NIOBIUM OXIDE;

EID: 84875698922     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.02.084     Document Type: Article

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