Surface sulfurization on MBE-grown Cu(In1-x,Gax)Se2 thin films and devices

Japanese Journal of Applied Physics

Volumn 54, Issue 8, 2015, Pages

  Khatri, Ishwor ^a   Matsuyama, Isamu ^a   Yamaguchi, Hiroshi ^a   Fukai, Hirofumi ^a   Nakada, Tokio ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; OPEN CIRCUIT VOLTAGE; SOLAR POWER GENERATION; THIN FILMS;

CIGS ABSORBER LAYERS; MICRO-ROUGHNESS; NEAR BAND EDGE; PHOTOVOLTAIC PERFORMANCE; PL INTENSITY; SIMS ANALYSIS; SULFURIZATION TEMPERATURE; SURFACE SULFURIZATION;

SOLAR CELLS;

EID: 84938536269     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.54.08KC10     Document Type: Conference Paper

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