Defect formation in Cu(In,Ga)Se2 thin films due to the presence of potassium during growth by low temperature co-evaporation process

Journal of Applied Physics

Volumn 114, Issue 19, 2013, Pages

  Pianezzi, F ^a   Reinhard, P ^a,b   Chirila A ^a   Nishiwaki, S ^a   Bissig, B ^a   Buecheler, S ^a   Tiwari, A N ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^b FLISOM Ltd   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ADMITTANCE SPECTROSCOPIES; EXTERNAL QUANTUM EFFICIENCY; HIGH-EFFICIENCY SOLAR CELLS; LOW SUBSTRATE TEMPERATURE; LOW TEMPERATURE GROWTH; MINORITY CARRIER LIFETIMES; POST DEPOSITION TREATMENT; TIME-RESOLVED PHOTOLUMINESCENCE;

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; GALLIUM; LOW TEMPERATURE PRODUCTION; SEMICONDUCTING SELENIUM COMPOUNDS; SODIUM; SOLAR CELLS; TEMPERATURE;

SUBSTRATES;

EID: 84888354274     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4832781     Document Type: Article

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