Photoluminescence and time-resolved photoluminescence in Cu(In, Ga)Se 2 thin films and solar cells

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 5, 2009, Pages 1059-1062

  Shirakata, Sho ^a   Nakada, Tokio ^b  

^a EHIME UNIVERSITY   (Japan)

^b AOYAMA GAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CD ATOM; CD DIFFUSION; CDS BUFFER; CHARACTERIZATION METHODS; CHEMICAL-BATH DEPOSITION; CIGS FILMS; CIGS SOLAR CELLS; CIGS THIN FILMS; CU(IN , GA)SE; DECAY TIME; EXCITATION LIGHT; GA CONTENT; LOW TEMPERATURES; NEAR BAND EDGE; NON DESTRUCTIVE; OPEN CIRCUIT CONDITIONS; ORDERS OF MAGNITUDE; PHOTOEXCITED CARRIERS; PL INTENSITY; PL MEASUREMENTS; REPETITION FREQUENCY; SHORT-CIRCUIT CONDITIONS; TIME-RESOLVED; TIME-RESOLVED PHOTOLUMINESCENCE;

CADMIUM COMPOUNDS; CELL MEMBRANES; DECAY (ORGANIC); GALLIUM; PHOTOLUMINESCENCE; PHOTOVOLTAIC CELLS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; SOLAR POWER GENERATION; THIN FILM DEVICES; THIN FILMS;

COPPER;

EID: 70349431572     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881164     Document Type: Conference Paper

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