Near-band-edge photoluminescnce in Cu(In,Ga)Se2 solar cells

Solar Energy Materials and Solar Cells

Volumn 95, Issue 1, 2011, Pages 219-222

  Shirakata, Sho ^a   Nakada, Tokio ^b  

^a EHIME UNIVERSITY   (Japan)

^b AOYAMA GAKUIN UNIVERSITY   (Japan)

Author keywords

Cu(InGa)Se2 solar cell; Photoluminescence; Time resolved photoluminescence

Indexed keywords

CARRIER RECOMBINATION; CHARACTERIZATION METHODS; CIGS FILMS; CIGS SOLAR CELLS; CIGS THIN FILMS; CU(IN , GA)SE; CU(INGA)SE2 SOLAR CELL; DC BIAS; DECAY CHARACTERISTICS; DECAY TIME; EXCITATION INTENSITY; LASER BEAM INDUCED CURRENT; NEAR BAND EDGE; OPEN CIRCUIT CONDITIONS; PHOTO-VOLTAGE; PHOTOVOLTAIC PROPERTY; PL EXCITATIONS; PL INTENSITY; ROOM TEMPERATURE; SHORT CIRCUIT; TIME-RESOLVED PHOTOLUMINESCENCE;

CYTOLOGY; DECAY (ORGANIC); GALLIUM; PHOTOLUMINESCENCE; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS;

SOLAR POWER GENERATION;

EID: 78149358757     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.04.067     Document Type: Conference Paper

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