Transport properties of solution processed Cu2SnS3/AZnO heterostructure for low cost photovoltaics

Solar Energy Materials and Solar Cells

Volumn 143, Issue , 2015, Pages 152-158

  Dias, Sandra ^a   Murali, Banavoth ^a   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Al doped ZnO; Barrier height; Cu2SnS3; Ideality factor; Transport properties

Indexed keywords

COPPER COMPOUNDS; CRYSTAL STRUCTURE; ELECTRON TRANSPORT PROPERTIES; FIELD EMISSION MICROSCOPES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; SCANNING ELECTRON MICROSCOPY; SOL-GELS; THERMIONIC EMISSION; THIN FILMS; TIN COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES; X RAY DIFFRACTION; ZINC OXIDE;

AL-DOPED ZNO; BARRIER HEIGHTS; CU2SNS3; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GRAZING-INCIDENCE X-RAY DIFFRACTION; IDEALITY FACTORS; PREFERENTIAL ORIENTATION; TRANSPORT CHARACTERISTICS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84938497120     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2015.06.046     Document Type: Article

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