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Volumn 4, Issue 3, 2014, Pages

Temperature dependent electrical behaviour of Cu2SnS3 films

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COPPER; ELECTRIC PROPERTIES; FIELD EMISSION; TEMPERATURE; THERMIONIC EMISSION;

EID: 84896987439     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4869639     Document Type: Article
Times cited : (11)

References (26)
  • 4
    • 0022766105 scopus 로고
    • 10.1016/0165-1633(87)90019-0
    • T. Kuku and O. Fakolujo, Sol. Energy Mater 16, 199 (1987). 10.1016/0165-1633(87)90019-0
    • (1987) Sol. Energy Mater , vol.16 , pp. 199
    • Kuku, T.1    Fakolujo, O.2
  • 12
    • 0141817672 scopus 로고
    • 10.1103/PhysRev.155.657
    • J. G. Simmons, Phys. Rev. 155, 657 (1967). 10.1103/PhysRev.155.657
    • (1967) Phys. Rev. , vol.155 , pp. 657
    • Simmons, J.G.1
  • 15
    • 0000610808 scopus 로고    scopus 로고
    • High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
    • DOI 10.1063/1.115948, PII S0003695196009096
    • L. Wang, M. I. Nathan, T. Lim, M. A. Khan, and Q. Chen, Appl. Phys. Lett. 68, 1267 (1996). 10.1063/1.115948 (Pubitemid 126684152)
    • (1996) Applied Physics Letters , vol.68 , Issue.9 , pp. 1267-1269
    • Wang, L.1    Nathan, M.I.2    Lim, T.-H.3    Khan, M.A.4    Chen, Q.5
  • 20
    • 0030129881 scopus 로고    scopus 로고
    • Barrier characteristics of PtSi/p-Si Schottky diodes as determined from I-V-T measurements
    • DOI 10.1016/0038-1101(95)00162-X
    • P. G. McCafferty, A. Sellai, P. Dawson, and H. Elabd, Solid-State Electronics 39, 583 (1996). 10.1016/0038-1101(95)00162-X (Pubitemid 126350704)
    • (1996) Solid-State Electronics , vol.39 , Issue.4 , pp. 583-592
    • McCafferty, P.G.1    Sellai, A.2    Dawson, P.3    Elabd, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.