Silicon carbide power device development for industrial markets

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2015-February, Issue February, 2015, Pages 1.1.1-1.1.8

  Palmour, John W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY CONVERSION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS;

4H-SIC MOSFETS; FABRICATION PROCESS; HIGH-FREQUENCY ENERGY CONVERSION; INDUSTRIAL MARKETS; SILICON-CARBIDE POWER DEVICES; SPECIFIC-ON RESISTANCE; VERY HIGH FREQUENCY; VOLTAGE RATINGS;

MOSFET DEVICES;

EID: 84938281573     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2014.7046960     Document Type: Conference Paper

References (16)

1. D. Grider, M. Das, A. Agarwal and J. Palmour, "10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation", IEEE Electric Ship Technologies Symp, 2010, pp 131-134.
2. V. Tsvetkov, R. Glass, D. Henshall, D. Asbury and C.H. Carter, Jr., "SiC Seeded Boule Growth", Mater. Sci. Forum, vol. 264-268 (1998), pp. 3-8.
3. http://www.cree.com/News-and-Events/Cree-News/Press Releases/2012/August/150mm-wafers, Cree Introduces 150-mm 4HN Silicon Carbide Epitaxial Wafers (2012)
4. A.A. Burk, et al., "Latest SiC Epitaxial Layer Growth Results in a High Through-put 6 x 150 mm Warm-Wall Planetary Reactor" Mater. Sci. Forum, vol. 778-780 (2014), pp. 113-116.
5. L. Cheng, et al, "High-Temperature Performance of 1200 V, 200 A 4HSiC Power DMOSFETs", Mater. Sci. Forum, vol. 717-720 (2012), pp. 1065-1068, 2012.
6. J.M. Briere, "GaN based power devices," RPI CFES Conf., (2013).
7. 5SMX 12M6501 IGBT datasheet, www05.abb.com
8. Gangyao Wang, "Design, Development and Control of 13kV Silicon-Carbide MOSFET based Solid State Transformer (SST)., Doctor of Philosophy Thesis, Dept. Elect. Engr, NC State University (2013).
9. A. J. Lelis, D. Habersat, G. Lopez, J. M. McGarrity, F. B. McLean, and N. Goldsman, Mater. Sci. Forum, vol. 527-529 (2006), pp. 1317-1320.
10. M. J. Tadjer, K. D. Hobart, E. A. Imhoff, and F. J. Kub, Mater. Sci. Forum, vol. 600-603 (2009), pp. 1147-1150.
11. L. Cheng, et al., Proc. of IMAPS High Temperature Electronics Conference (HiTEC 2012), 149 - 153, (2012).
12. L. Cheng, et al., Mat. Sci. Forum, vol. 740-742 (2013), 978-981, (2012).
13. S-H. Ryu, et al., "Development of 15 kV 4H-SiC IGBTs", Mat. Sci. Forum, vol. 717-720, (2012) pp. 1135-1138.
14. A. O. Konstantinov et al, App. Phys. Lett., vol. 71, pp 90-92, 1997
15. E. Van Brunt, et al., "22 kV, 1 cm2, 4H-SiC n-IGBTs with Improved Conductivity Modulation," Proc. 2014 26th Intnl. Symp. on Power Semi. Devices, June 15-19, 2014 Waikoloa, Hawaii. pp. 358-361.
16. E. Van Brunt, L. Cheng, M.J. O'Loughlin, J. Richmond, V. Pala, J. Palmour, C.W. Tipton, and C. Scozzie, "27 kV, 20 A 4H-SiC n-IGBTs" to be published in Mat. Sci. Forum (2014).