High-temperature performance of 1200 V, 200 A 4H-SiC power DMOSFETs

Materials Science Forum

Volumn 717-720, Issue , 2012, Pages 1065-1068

  Cheng, Lin ^a   Ryu, Sei Hyung ^a   Agarwal, Anant K ^a   O'Loughlin, Michael ^a   Burk, Al ^a   Richmond, Jim ^a   Lelis, Aivars ^b   Scozzie, Charles ^b   Palmour, John W ^a  

^a Arkansas Power Electronics International Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

High temperature; Interface traps; Inversion layer electron mobility; MOS channel mobility; Power DMOSFET

Indexed keywords

MOSFET DEVICES; TEMPERATURE DISTRIBUTION; THRESHOLD VOLTAGE;

HIGH TEMPERATURE; INTERFACE TRAPS; INVERSION LAYER ELECTRON MOBILITIES; MOS CHANNEL MOBILITIES; POWER DMOSFET;

SILICON CARBIDE;

EID: 84861349944     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.717-720.1065     Document Type: Conference Paper

References (5)

1. http://www.cree.com/press/press-detail.asp?i=1295272745318
2. B. A. Hull et al., Materials Science Forums Vols. 615-617 (2009), pp. 749-752
3. rd International Symposium on Power Semiconductor Devices & IC's, 2011 (ISPSD'11), San diego, CA, USA, May 22 - 27, 2011.
4. S.-H. Ryu, L. Cheng, S. Dhar, C. Capell, C. Jonas, R. Callanan, M. O'Loughlin, A. Burk, A. Lelis, C. Scozzie, A. Agarwal, and J. Palmour, to be presented at ICSCRM 2011, Cleveland, Ohio, USA, Sept. 11-16, 2011.
5. L. Cheng, A. K. Agarwal, S. Dhar, S.-H. Ryu, B. A. Hull, and J. W. Palmour, presented at 2011 Electronic Materials Conference (EMC), Santa Barbara, CA, USA, Jun. 22-24, 2011.