22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2014, Pages 358-361

  Brunt, E V ^a   Cheng, L ^a   O'Loughlin, M ^a   Capell, C ^a   Jonas, C ^a   Lam, K ^a   Richmond, J ^a   Pala, V ^a   Ryu, S ^a   Allen, S T ^a   Burk, A A ^a   Palmour, J W ^a   Scozzie, C ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MODULATION;

BLOCKING VOLTAGE; CONDUCTIVITY MODULATION; DEVICE FABRICATIONS; FORWARD VOLTAGE DROPS; LIFETIME ENHANCEMENT; ROOM TEMPERATURE; SWITCHING ENERGY; THERMAL OXIDATION PROCESS;

SILICON CARBIDE;

EID: 84905460127     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2014.6856050     Document Type: Conference Paper

References (4)

1. M. Lee and A. Q. Huang, "An injection efficiency model to characterize the injection capability and turn-off speed for >10 kV 4HSiC IGBTs," Solid-State Electronics, vol. 93, pp. 27-39, 2014.
2. K. Kawahara, J. Suda, and T. Kimoto, "Analytical Model for Reduction of Deep Levels in SiC by Thermal Oxidation," Journal of Applied Physics, vol. 111, 053710, 2012.
3. A. O. Konstantinov, Q. Wahab, N. Nordell, and U. Lindfelt, "Ionization Rates and Critical Fields in 4H Silicon Carbide," Applied Physics Letters, Vol. 71, pp. 90-92, 1997
4. B. Jayant Baliga, Advanced High Voltage Power Device Concepts, 1st ed., New York: Springer, 2012, pp. 318-333.