Development of 15 kV 4H-SiC IGBTs

Materials Science Forum

Volumn 717-720, Issue , 2012, Pages 1135-1138

  Ryu, Sei Hyung ^a   Cheng, Lin ^a   Dhar, Sarit ^a   Capell, Craig ^a   Jonas, Charlotte ^a   Clayton, Jack ^a   Donofrio, Matt ^a   O'Loughlin, Michael ^a   Burk, Al ^a   Agarwal, Anant ^a   Palmour, John ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Bipolar; High current; High voltage; IGBT

Indexed keywords

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR; BLOCKING VOLTAGE; HIGH CURRENTS; HIGH VOLTAGE; LATEST DEVELOPMENT; SPECIFIC-ON RESISTANCE; TEMPERATURE DIFFERENTIAL; ULTRA HIGH VOLTAGE;

SILICON CARBIDE;

EID: 84861357342     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.717-720.1135     Document Type: Conference Paper

References (4)

1. A. Agarwal et al., Mat. Sci. forum Vol. 645-648 (2010), pp. 1017-1020
2. Q. Zhang et al., IEEE EDL, V. 29, Is. 9, Sep. 2008, p. 1027.
3. M. Das et al., Proceedings of ISPSD 2008, Orlando, FL, May 18-22, pp.253-255
4. A. Hefner and D. Blackburn, IEEE Trans. PE, vol. PE-2, Is. 3, Jul 1987, p. 194