Latest sic epitaxial layer growth results in a high-throughput 6×150 mm warm-wall planetary reactor

Materials Science Forum

Volumn 778-780, Issue , 2014, Pages 113-116

  Burk, A A ^a   Tsvetkov, D ^a   O'Loughlin, M J ^a   Ustin, S ^a   Garrett, L ^a   Powell, A R ^a   Seaman, J ^a   Partin, N ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

150 mm diameter; SiC epitaxy; Warm wall planetary reactors

Indexed keywords

MORPHOLOGY; MOSFET DEVICES; SILICON CARBIDE; SILICON WAFERS;

150-MM DIAMETERS; LAYER MORPHOLOGY; MARKET PENETRATION; MORPHOLOGICAL DEFECTS; SIC EPITAXIES; TEMPERATURE UNIFORMITY; VAPOR PHASE EPITAXIAL; WARM-WALL PLANETARY REACTORS;

EPITAXIAL GROWTH;

EID: 84896079910     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.778-780.113     Document Type: Conference Paper

References (5)

1. http://www.cree.com/press/press_detail.asp?i=1295272745318
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