Transient Structures and Possible Limits of Data Recording in Phase-Change Materials

ACS Nano

Volumn 9, Issue 7, 2015, Pages 6728-6737

  Hu, Jianbo ^a   Vanacore, Giovanni M ^a   Yang, Zhe ^a,b   Miao, Xiangshui ^a   Zewail, Ahmed H ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Ge Sb Te alloy; germanium telluride; phase transitions; phase change materials; structural dynamics; ultrafast electron diffraction

Indexed keywords

CRYSTALLINE MATERIALS; DIGITAL STORAGE; GERMANIUM; OPTICAL RECORDING; PHASE TRANSITIONS; STRUCTURAL DYNAMICS; VIRTUAL STORAGE;

ATOMIC-SCALE RESOLUTION; CRYSTALLINE GERMANIUM; CRYSTALLINE-TO-AMORPHOUS; DATA STORAGE DEVICES; ELECTRON CRYSTALLOGRAPHY; GE-SB-TE ALLOYS; GERMANIUM TELLURIDE; ULTRAFAST ELECTRON DIFFRACTION;

PHASE CHANGE MATERIALS;

EID: 84938151026     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b01965     Document Type: Article

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