Room-temperature selective epitaxial growth of CoO (1 1 1) and Co 3 O 4 (1 1 1) thin films with atomic steps by pulsed laser deposition

Applied Surface Science

Volumn 349, Issue , 2015, Pages 78-82

  Matsuda, Akifumi ^a   Yamauchi, Ryosuke ^a   Shiojiri, Daishi ^a   Tan, Geng ^a   Kaneko, Satoru ^a,b   Yoshimoto, Mamoru ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Atomic steps; Cobalt oxide; Epitaxy; Pulsed laser deposition; Room temperature; Thin film

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMS; COBALT COMPOUNDS; ENERGY GAP; GRAIN GROWTH; OXIDE FILMS; PULSED LASER DEPOSITION; PULSED LASERS; QUALITY CONTROL; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

ATOMIC STEP; COBALT OXIDES; EPITAXIAL THIN FILMS; NON STOICHIOMETRY; ROOT MEAN SQUARE ROUGHNESS; SELECTIVE EPITAXIAL GROWTH; SURFACE/INTERFACE; X-RAY RECIPROCAL SPACE MAPPING;

EPITAXIAL GROWTH;

EID: 84937691632     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2015.04.205     Document Type: Article

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