Homoepitaxial growth of α-Al2O3 thin films on atomically stepped sapphire substrates by pulsed laser deposition at room-temperature

Journal of the Ceramic Society of Japan

Volumn 121, Issue 1413, 2013, Pages 467-469

  Shiojiri, Daishi ^a   Yamauchi, Ryosuke ^a   Kaneko, Satoru ^a,b   Matsuda, Akifumi ^a   Yoshimoto, Mamoru ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Atomic step; Epitaxial growth; Pulsed laser deposition; Room temperature processing; Sapphire; Substrate engineering

Indexed keywords

ALUMINUM; ATOMS; DEPOSITION; PULSED LASER DEPOSITION; PULSED LASERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SUBSTRATES; THIN FILMS;

ATOMIC STEP; CRYSTALLINITIES; HOMOEPITAXIAL GROWTH; PLANE SAPPHIRE; ROOM TEMPERATURE PROCESSING; SAPPHIRE SUBSTRATES; SITU REFLECTION; SUBSTRATE ENGINEERING;

EPITAXIAL GROWTH;

EID: 84878885070     PISSN: 18820743     EISSN: 13486535     Source Type: Journal    
DOI: 10.2109/jcersj2.121.467     Document Type: Article

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