Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer

Journal of Materials Research

Volumn 19, Issue 9, 2004, Pages 2725-2729

  Sasaki, Atsushi ^a   Liu, Jin ^a   Hara, Wakana ^a   Akiba, Shusaku ^a   Saito, Keisuke ^b   Yodo, Tokuo ^c   Yoshimoto, Mamoru ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b BRUKER AXS INC   (United States)

^c OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; MORPHOLOGY; NICKEL COMPOUNDS; PULSED LASER DEPOSITION; SAPPHIRE; STRUCTURE (COMPOSITION); SURFACES; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL THIN FILMS; FOUR CIRCLE X RAY DIFFRACTION ANALYSIS; HETEROEPITAXIAL STRUCTURE; NICKEL OXIDE;

ALUMINUM NITRIDE;

EID: 6344278050     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0346     Document Type: Article

References (28)

1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama: High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes. Appl. Phys. Lett. 67, 1868 (1995).
2. S. Nakamura: First laser diodes fabricated from III-V nitride based materials. Mater. Sci. Eng. B 43, 258 (1997).
3. G.F. Iriarte, F. Engelmark, and I.V. Katardjiev: Reactive sputter deposition of highly oriented AIN films at room temperature. J. Mater. Res. 17, 1469 (2002).
4. H. Amano, N. Sawasaki, I. Akasaki, and Y. Toyoda: Metalorganic vapor-phase epitaxial growth of a high quality GaN film using an AIN buffer layer. Appl. Phys. Lett. 48, 353 (1986).
5. S. Yoshida, S. Misawa, and S. Gonda: Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AIN-coated sapphire substrates. Appl. Phys. Lett. 42, 427 (1983).
6. R.D Feiler, S. Williams, A.A. Talin, H. Yoon, and M.S. Goorsky: Pulsed laser deposition of epitaxial AIN, GaN, and InN thin films on sapphire(0001). J. Cryst. Growth 171, 12 (1997).
7. 4 substrates by pulsed laser deposition. Appl. Surf Sci. 197-198, 486 (2002).
8. L. Lynds, B.R. Weinberger, G.G. Peterson, and H.A. Krasinski: Superconducting thin films of Y-Ba-Cu-O produced by neodymium:yttrium aluminum garnet laser ablation. Appl. Phys. Lett. 52, 320 (1988).
9. 2 thin films on Si(1 1 1) substrates for fabrication of sharp oxide/silicon interface. Jpn. J. Appl. Phys. 32, L688 (1995).
10. 2(001) films on YSZ buffered Si(001) substrates. Appl. Phys. A Mater. Sci. Proc. 67, 455 (1998).
11. 2 ultra-thin buffer. Thin Solid Films 415, 272 (2002).
12. T. Ohnishi, M. Yoshimoto, G.H. Lee, T. Maeda, and H. Koinuma: Unit cell layer-by-layer heteroepitaxy of BaO thin films at temperatures as low as 20°C. J. Vac. Sci. Technol. A 15, 2469 (1997 ).
13. K. Ramamoorthy, C. Sanjeeviraja, M. Jayachandran, K. Sankaranarayanan, P. Bhattacharya, and L.M. Kukreja: Preparation and characterization of ZnO thin films on InP by lasermolecular beam epitaxy technique for solar cells. J. Cryst. Growth 226, 281 (2001).
14. M. Tachiki, T. Hosomi, and T. Kobayashi: Room-temperature heteroepitaxial growth of NiO thin films using pulsed laser deposition. Jpn. J. Appl. Phys. 39, 1817 (2000).
15. Y. Kakehi, S. Nakao, K. Satoh, and T. Kusaka: Room-temperature epitaxial growth of NiO(1 1 1) thin films by pulsed laser deposition. J. Cryst. Growth 237-239, 591 (2002).
16. A. Sasaki, H. Isa, J. Liu, S. Akiba, T. Hanada, and M. Yoshimoto: Fabrication of micropatterns on sapphire substrates via room-temperature selective homoepitaxial growth induced by electron beam irradiation. Jpn. J. Appl. Phys. 41, 6534 (2002).
17. T. Kiyomura and M. Gomi: Room-temperature epitaxial growth of Ni-Zn ferrite thin films by pulsed laser deposition in high vacuum. Jpn. J. Appl. Phys. 36, L1000 (1997).
18. J. Ohta, H. Fujioka, S. Ito, and M. Oshima: Room-temperature epitaxial growth of AIN films. Appl. Phys. Lett. 81, 2373 (2002).
19. J. Ohta, H. Fujioka, and M. Oshima: Room-temperature epitaxial growth of GaN on conductive substrates. Appl. Phys. Lett. 83, 3060 (2003).
20. xN (0 < x ≤ 0.4) films grown on sapphire substrate by MOVPE. J. Cryst. Growth 98, 209 (1989).
21. S. Nakamura, M. Senoh, and T. Mukai: High-power InGaN/GaN double-heterostructure violet light emitting diodes. Appl. Phys. Lett. 62, 2390 (1993).
22. 3 and Si. Jpn. J. Appl. Phys. 34, 831 (1995).
23. M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, and A. Miyamoto: Atomicscale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication. Appl. Phys. Lett. 67, 2615 (1995).
24. S. Hufner, P. Steinen, I. Sander, M. Neumann, and S. Witzel: Photoemission on NiO. Z. Phys. B 83, 185 (1991).
25. O. Sakata, M-S. Yi, A. Matsuda, J. Liu, S. Sato, S. Akiba, A. Sasaki, and M. Yoshimoto: Structural analysis of NiO ultrathin films epitaxially grown on ultra-smooth sapphire substrates by synchrotron x-ray diffraction measurements. Appl. Surf. Sci. 221,450 (2004).
26. H. Koinuma and M. Yoshimoto: Controlled formation of oxide materials by laser molecular beato epitaxy. Appl. Surf. Sci. 75, 308 (1994).
27. 7-8 Appl. Phys. Lett. 59, 1302 (1991).
28. W.M. Yim, E.J. Stofko. P.J. Zanzucchi, J.I. Pankove, M. Ettenberg, and S.L. Gilbert: Epitaxially grown AIN and its optical band gap. J. Appl. Phys. 44, 292 (1973).