SCOPUS 정보 검색 플랫폼

Nano Letters

Volumn 14, Issue 8, 2014, Pages 4660-4664

Ideal graphene/silicon schottky junction diodes

(2) Sinha, Dhiraj a Lee, Ji Ung a

a SUNY POLYTECHNIC INSTITUTE (United States)

Author keywords

Graphene; ideal diode; injection rate; Landauer transport formalism

Indexed keywords

DIODES; GRAPHENE; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SILICON;

CURRENT VOLTAGE; DIODE CHARACTERISTICS; IDEAL DIODES; INJECTION RATES; LANDAUER; METAL SEMICONDUCTOR INTERFACE; SCHOTTKY JUNCTIONS; TRANSPORT MODELING;

SEMICONDUCTOR JUNCTIONS;

EID: 84906085945 PISSN: 15306984 EISSN: 15306992 Source Type: Journal
DOI: 10.1021/nl501735k Document Type: Article

Times cited : (257)

References (36)

1
- 84874960195
- An, X.; Liu, F.; Jung, Y. J.; Kar, S. Nano Lett. 2013, 13 (3) 909-916
- (2013) Nano Lett. , vol.13 , Issue.3 , pp. 909-916
- An, X.¹ Liu, F.² Jung, Y.J.³ Kar, S.⁴

2
- 84863031082
- Sung, C.-Y.; Lee, J. U. IEEE Spectrum 2012, 49 (2) 32-59
- (2012) IEEE Spectrum , vol.49 , Issue.2 , pp. 32-59
- Sung, C.-Y.¹ Lee, J.U.²

3
- 84857567921
- Britnell, L.; Gorbachev, R.; Jalil, R.; Belle, B.; Schedin, F.; Mishchenko, A.; Georgiou, T.; Katsnelson, M.; Eaves, L.; Morozov, S. Science 2012, 335 (6071) 947-950
- (2012) Science , vol.335 , Issue.6071 , pp. 947-950
- Britnell, L.¹ Gorbachev, R.² Jalil, R.³ Belle, B.⁴ Schedin, F.⁵ Mishchenko, A.⁶ Georgiou, T.⁷ Katsnelson, M.⁸ Eaves, L.⁹ Morozov, S.¹⁰

4
- 77951835400
- Mueller, T.; Xia, F.; Avouris, P. Nat. Photonics 2010, 4 (5) 297-301
- (2010) Nat. Photonics , vol.4 , Issue.5 , pp. 297-301
- Mueller, T.¹ Xia, F.² Avouris, P.³

5
- 84885459142
- Zeng, L.-H.; Wang, M.-Z.; Hu, H.; Nie, B.; Yu, Y.-Q.; Wu, C.-Y.; Wang, L.; Hu, J.-G.; Xie, C.; Liang, F.-X. ACS Appl. Mater. Interfaces 2013, 5 (19) 9362-9366
- (2013) ACS Appl. Mater. Interfaces , vol.5 , Issue.19 , pp. 9362-9366
- Zeng, L.-H.¹ Wang, M.-Z.² Hu, H.³ Nie, B.⁴ Yu, Y.-Q.⁵ Wu, C.-Y.⁶ Wang, L.⁷ Hu, J.-G.⁸ Xie, C.⁹ Liang, F.-X.¹⁰

6
- 84872354413
- An, Y.; Behnam, A.; Pop, E.; Ural, A. Appl. Phys. Lett. 2013, 102 (1) 013110
- (2013) Appl. Phys. Lett. , vol.102 , Issue.1 , pp. 013110
- An, Y.¹ Behnam, A.² Pop, E.³ Ural, A.⁴

7
- 84884761788
- Lv, P.; Zhang, X.; Deng, W.; Jie, J. IEEE Electron Device Lett. 2013, 34 (10) 1337-1339
- (2013) IEEE Electron Device Lett. , vol.34 , Issue.10 , pp. 1337-1339
- Lv, P.¹ Zhang, X.² Deng, W.³ Jie, J.⁴

8
- 84862297466
- Miao, X.; Tongay, S.; Petterson, M. K.; Berke, K.; Rinzler, A. G.; Appleton, B. R.; Hebard, A. F. Nano Lett. 2012, 12 (6) 2745-2750
- (2012) Nano Lett. , vol.12 , Issue.6 , pp. 2745-2750
- Miao, X.¹ Tongay, S.² Petterson, M.K.³ Berke, K.⁴ Rinzler, A.G.⁵ Appleton, B.R.⁶ Hebard, A.F.⁷

9
- 77955213063
- Li, X.; Zhu, H.; Wang, K.; Cao, A.; Wei, J.; Li, C.; Jia, Y.; Li, Z.; Li, X.; Wu, D. Adv. Mater. 2010, 22 (25) 2743-2748
- (2010) Adv. Mater. , vol.22 , Issue.25 , pp. 2743-2748
- Li, X.¹ Zhu, H.² Wang, K.³ Cao, A.⁴ Wei, J.⁵ Li, C.⁶ Jia, Y.⁷ Li, Z.⁸ Li, X.⁹ Wu, D.¹⁰

10
- 84861659653
- Yang, H.; Heo, J.; Park, S.; Song, H. J.; Seo, D. H.; Byun, K.-E.; Kim, P.; Yoo, I.; Chung, H.-J.; Kim, K. Science 2012, 336 (6085) 1140-1143
- (2012) Science , vol.336 , Issue.6085 , pp. 1140-1143
- Yang, H.¹ Heo, J.² Park, S.³ Song, H.J.⁴ Seo, D.H.⁵ Byun, K.-E.⁶ Kim, P.⁷ Yoo, I.⁸ Chung, H.-J.⁹ Kim, K.¹⁰

11
- 84877281046
- Kim, H.-Y.; Lee, K.; McEvoy, N.; Yim, C.; Duesberg, G. S. Nano Lett. 2013, 13 (5) 2182-2188
- (2013) Nano Lett. , vol.13 , Issue.5 , pp. 2182-2188
- Kim, H.-Y.¹ Lee, K.² McEvoy, N.³ Yim, C.⁴ Duesberg, G.S.⁵

12
- 79955910805
- Chen, C.-C.; Aykol, M.; Chang, C.-C.; Levi, A.; Cronin, S. B. Nano Lett. 2011, 11 (5) 1863-1867
- (2011) Nano Lett. , vol.11 , Issue.5 , pp. 1863-1867
- Chen, C.-C.¹ Aykol, M.² Chang, C.-C.³ Levi, A.⁴ Cronin, S.B.⁵

13
- 80052822197
- Tongay, S.; Lemaitre, M.; Schumann, T.; Berke, K.; Appleton, B.; Gila, B.; Hebard, A. Appl. Phys. Lett. 2011, 99 (10) 102102
- (2011) Appl. Phys. Lett. , vol.99 , Issue.10 , pp. 102102
- Tongay, S.¹ Lemaitre, M.² Schumann, T.³ Berke, K.⁴ Appleton, B.⁵ Gila, B.⁶ Hebard, A.⁷

14
- 84863199500
- Tongay, S.; Lemaitre, M.; Miao, X.; Gila, B.; Appleton, B.; Hebard, A. Phys. Rev. X 2012, 2 (1) 011002
- (2012) Phys. Rev. X , vol.2 , Issue.1 , pp. 011002
- Tongay, S.¹ Lemaitre, M.² Miao, X.³ Gila, B.⁴ Appleton, B.⁵ Hebard, A.⁶

15
- 79961096548
- Singh, R. S.; Nalla, V.; Chen, W.; Wee, A. T. S.; Ji, W. ACS Nano 2011, 5 (7) 5969-5975
- (2011) ACS Nano , vol.5 , Issue.7 , pp. 5969-5975
- Singh, R.S.¹ Nalla, V.² Chen, W.³ Wee, A.T.S.⁴ Ji, W.⁵

16
- 84883523039
- Nie, B.; Hu, J. G.; Luo, L. B.; Xie, C.; Zeng, L. H.; Lv, P.; Li, F. Z.; Jie, J. S.; Feng, M.; Wu, C. Y. Small 2013, 9 (17) 2872-2879
- (2013) Small , vol.9 , Issue.17 , pp. 2872-2879
- Nie, B.¹ Hu, J.G.² Luo, L.B.³ Xie, C.⁴ Zeng, L.H.⁵ Lv, P.⁶ Li, F.Z.⁷ Jie, J.S.⁸ Feng, M.⁹ Wu, C.Y.¹⁰

17
- 84906085563
- 225th ECS Meeting, Orlando, Florida, United States, May 11-15, 2014; The Electrochemical Society: Pennington, New Jersey, United States
- Ural, A. In Fabrication and Characterization of Photodetectors Composed of Graphene/Silicon Schottky Junctions, 225th ECS Meeting, Orlando, Florida, United States, May 11-15, 2014; The Electrochemical Society: Pennington, New Jersey, United States, 2014, pp 1258 - 1258.
- (2014) Fabrication and Characterization of Photodetectors Composed of Graphene/Silicon Schottky Junctions , pp. 1258-1258
- Ural, A.¹

18
- 84889822234
- Yim, C.; McEvoy, N.; Duesberg, G. S. Appl. Phys. Lett. 2013, 103 (19) 193106
- (2013) Appl. Phys. Lett. , vol.103 , Issue.19 , pp. 193106
- Yim, C.¹ McEvoy, N.² Duesberg, G.S.³

19
- 84888253200
- Rajput, S.; Chen, M.; Liu, Y.; Li, Y.; Weinert, M.; Li, L. Nat. Commun. 2013, 4, 2752
- (2013) Nat. Commun. , vol.4 , pp. 2752
- Rajput, S.¹ Chen, M.² Liu, Y.³ Li, Y.⁴ Weinert, M.⁵ Li, L.⁶

20
- 84862586775
- Shivaraman, S.; Herman, L. H.; Rana, F.; Park, J.; Spencer, M. G. Appl. Phys. Lett. 2012, 100 (18) 183112
- (2012) Appl. Phys. Lett. , vol.100 , Issue.18 , pp. 183112
- Shivaraman, S.¹ Herman, L.H.² Rana, F.³ Park, J.⁴ Spencer, M.G.⁵

21
- 71949120734
- Tongay, S.; Schumann, T.; Hebard, A. Appl. Phys. Lett. 2009, 95 (22) 222103
- (2009) Appl. Phys. Lett. , vol.95 , Issue.22 , pp. 222103
- Tongay, S.¹ Schumann, T.² Hebard, A.³

22
- 84883037425
- Kim, S. M.; Hsu, A.; Lee, Y.-H.; Dresselhaus, M.; Palacios, T.; Kim, K. K.; Kong, J. Nanotechnology 2013, 24 (36) 365602
- (2013) Nanotechnology , vol.24 , Issue.36 , pp. 365602
- Kim, S.M.¹ Hsu, A.² Lee, Y.-H.³ Dresselhaus, M.⁴ Palacios, T.⁵ Kim, K.K.⁶ Kong, J.⁷

23
- 66749119012
- Li, X.; Cai, W.; An, J.; Kim, S.; Nah, J.; Yang, D.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E. Science 2009, 324 (5932) 1312-1314
- (2009) Science , vol.324 , Issue.5932 , pp. 1312-1314
- Li, X.¹ Cai, W.² An, J.³ Kim, S.⁴ Nah, J.⁵ Yang, D.⁶ Piner, R.⁷ Velamakanni, A.⁸ Jung, I.⁹ Tutuc, E.¹⁰

24
- 84862279097
- Petrone, N.; Dean, C. R.; Meric, I.; Van Der Zande, A. M.; Huang, P. Y.; Wang, L.; Muller, D.; Shepard, K. L.; Hone, J. Nano Lett. 2012, 12 (6) 2751-2756
- (2012) Nano Lett. , vol.12 , Issue.6 , pp. 2751-2756
- Petrone, N.¹ Dean, C.R.² Meric, I.³ Van Der Zande, A.M.⁴ Huang, P.Y.⁵ Wang, L.⁶ Muller, D.⁷ Shepard, K.L.⁸ Hone, J.⁹

25
- 0000766947
- Crowell, C.; Sze, S. Solid-State Electron. 1966, 9 (11) 1035-1048
- (1966) Solid-State Electron. , vol.9 , Issue.11 , pp. 1035-1048
- Crowell, C.¹ Sze, S.²

26
- 0003546026
- Clarendon Press: Oxford
- Rhoderick, E. H.; Williams, R. Metal-Semiconductor Contacts; Clarendon Press: Oxford, 1988.
- (1988) Metal-Semiconductor Contacts
- Rhoderick, E.H.¹ Williams, R.²

27
- 36149025707
- Bardeen, J. Phys. Rev. 1947, 71 (10) 717
- (1947) Phys. Rev. , vol.71 , Issue.10 , pp. 717
- Bardeen, J.¹

28
- 36849123485
- Cowley, A.; Sze, S. J. Appl. Phys. 1965, 36 (10) 3212-3220
- (1965) J. Appl. Phys. , vol.36 , Issue.10 , pp. 3212-3220
- Cowley, A.¹ Sze, S.²

29
- 0003672946
- Secondary Electron Emission Spectroscopy
- Springer: New York - 345
- Modinos, A. Secondary Electron Emission Spectroscopy. In Field, Thermionic, and Secondary Electron Emission Spectroscopy; Springer: New York, 1984; pp 327-345.
- (1984) Field, Thermionic, and Secondary Electron Emission Spectroscopy , pp. 327
- Modinos, A.¹

30
- 0001606915
- Horváth, Z. J. Solid-State Electron. 1996, 39 (1) 176-178
- (1996) Solid-State Electron. , vol.39 , Issue.1 , pp. 176-178
- Horváth, Z.J.¹

31
- 33748201647
- Dökme, İ.; Altindal, Ş.; Bülbül, M. M. Appl. Surf. Sci. 2006, 252 (22) 7749-7754
- (2006) Appl. Surf. Sci. , vol.252 , Issue.22 , pp. 7749-7754
- Dökme, I.¹ Altindal, Ş.² Bülbül, M.M.³

32
- 77957745197
- Taşçoǧlu, İ.; Aydemir, U.; Altndal, Ş. J. Appl. Phys. 2010, 108 (6) 064506
- (2010) J. Appl. Phys. , vol.108 , Issue.6 , pp. 064506
- Taşçoǧlu, I.¹ Aydemir, U.² Altndal, Ş.³

33
- 0018943815
- Martinez, A.; Esteve, D.; Guivarch, A.; Auvray, P.; Henoc, P.; Pelous, G. Solid-State Electron. 1980, 23 (1) 55-64
- (1980) Solid-State Electron. , vol.23 , Issue.1 , pp. 55-64
- Martinez, A.¹ Esteve, D.² Guivarch, A.³ Auvray, P.⁴ Henoc, P.⁵ Pelous, G.⁶

34
- 84975434861
- Anantha, N.; Doo, V.; Seto, D. J. Electrochem. Soc. 1971, 118 (1) 163-165
- (1971) J. Electrochem. Soc. , vol.118 , Issue.1 , pp. 163-165
- Anantha, N.¹ Doo, V.² Seto, D.³

35
- 84924156123
- Cambridge University Press: New York
- Datta, S. Quantum Transport: Atom to Transistor. Cambridge University Press: New York, 2005.
- (2005) Quantum Transport: Atom to Transistor
- Datta, S.¹

36
- 79952445612
- Xia, F.; Perebeinos, V.; Lin, Y.-m.; Wu, Y.; Avouris, P. Nat. Nanotechnol. 2011, 6 (3) 179-184
- (2011) Nat. Nanotechnol. , vol.6 , Issue.3 , pp. 179-184
- Xia, F.¹ Perebeinos, V.² Lin, Y.-M.³ Wu, Y.⁴ Avouris, P.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.