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Nanoscale

Volumn 7, Issue 28, 2015, Pages 11909-11914

Characterization of the structural defects in CVD-grown monolayered MoS2 using near-field photoluminescence imaging

(6) Lee, Yongjun a Park, Seki a Kim, Hyun a Han, Gang Hee a Lee, Young Hee a Kim, Jeongyong a

a Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN BOUNDARIES; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SULFUR COMPOUNDS;

CHEMICAL VAPOR DEPOSITIONS (CVD); ELECTRICAL AND OPTICAL PROPERTIES; LOCALIZED STATE; MOLYBDENUM DISULFIDE; NEAR-FIELD PHOTOLUMINESCENCE; PHYSICAL DAMAGES; SPATIAL RESOLUTION; STRUCTURAL DEFECT;

CHEMICAL VAPOR DEPOSITION;

EID: 84936972876 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c5nr02897c Document Type: Article

Times cited : (104)

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