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Volumn 2, Issue 4, 2014, Pages

Composition dependence of the band gap and doping in Cu2O-based alloys as predicted by an extension of the dilute-defect model

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; CALCULATIONS; COPPER OXIDES; DEFECTS; ENERGY GAP; FORECASTING; FUNCTIONAL MATERIALS; OXIDE SEMICONDUCTORS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

EID: 84936098729     PISSN: None     EISSN: 23317019     Source Type: Journal    
DOI: 10.1103/PhysRevApplied.2.044005     Document Type: Article
Times cited : (18)

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