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Japanese Journal of Applied Physics

Volumn 47, Issue 12, 2008, Pages 8811-8814

InGaN/AlGaN ultraviolet light-emitting diode with a Ti3O 5/Al2O3 distributed bragg reflector

(5) Jeong, Tak a,c Lee, Hyun Haeng a,b Park, Si Hyun b Baek, Jong Hyeob a Lee, June Key c

a Korea Photonics Technology Institute (KOPTI) (South Korea)

b Chosun University (South Korea)

c Chonnam National University (South Korea)

Author keywords

Distributed bragg reflectors; Light extraction; Reflectivity; Ultraviolet light emitting diodes

Indexed keywords

BRAGG CELLS; BRAGG REFLECTORS; CURRENT DENSITY; DIODES; DISTRIBUTED BRAGG REFLECTORS; ELECTRIC PROPERTIES; ELECTRON BEAMS; LIGHT EMISSION; OHMIC CONTACTS; REFLECTION; TIN; TITANIUM COMPOUNDS; ULTRAVIOLET INSTRUMENTS; ULTRAVIOLET RADIATION;

CONTACT LAYERS; CURRENT INJECTIONS; CURRENT VOLTAGES; DBR; ELECTRICAL PROPERTIES; ELECTRON BEAM EVAPORATIONS; INDIUM TIN OXIDES; LIGHT EMITTING DIODE LEDS; LIGHT EXTRACTION; LIGHT OUTPUTS; LIGHT-OUTPUT ENHANCEMENTS; NUMERICAL CALCULATIONS; OUTPUT POWER; QUARTER WAVES; REFLECTIVITY; ULTRA VIOLETS; ULTRAVIOLET LIGHT-EMITTING DIODES; UV LEDS;

LIGHT EMITTING DIODES;

EID: 59349107805 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.8811 Document Type: Article

Times cited : (25)

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