Light output enhancement of UV light-emitting diodes with embedded distributed bragg reflector

IEEE Photonics Technology Letters

Volumn 23, Issue 10, 2011, Pages 642-644

  Cheng, Bo Siao ^a   Chiu, Ching Hsueh ^a   Lo, Ming Hua ^a   Wu, Yun Lin ^a   Kuo, Hao Chung ^a   Lu, Tien Chang ^a   Cheng, Yuh Jen ^b   Wang, Shing Chung ^a   Huang, Kuo Jui ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^c Science Based Industrial Park   (Taiwan)

Author keywords

Distributed Bragg reflector (DBR); ultraviolet light emitting diodes (UVLEDs)

Indexed keywords

DBR; EPITAXIAL LATERAL OVERGROWTH; LIGHT OUTPUT; LIGHT OUTPUT ENHANCEMENT; LIGHT-EXTRACTION EFFICIENCY; LUMINOUS INTENSITY; MATERIAL QUALITY; NOVEL STRUCTURES; OUTPUT POWER; PATTERNED SUBSTRATES; RAY TRACING SIMULATION; SURFACE PIT DENSITIES; ULTRAVIOLET LIGHT-EMITTING DIODES; ULTRAVIOLET LIGHT-EMITTING DIODES (UVLEDS); UV LIGHT;

DIODES; DISTRIBUTED BRAGG REFLECTORS; EPITAXIAL GROWTH; EXTRACTION; LIGHT EMISSION; LIGHT EMITTING DIODES; ULTRAVIOLET RADIATION;

REFLECTION;

EID: 79955517406     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2121057     Document Type: Article

References (11)

1. S. Nakamura, T. Mukai, andM. Senoh, "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes," Appl. Phys. Lett., vol. 64, pp. 1687-1689, 1994.
2. G. B. Stringfellow and M. G. Craford, . Boston, MA: Academic, 1997.
3. J. K. Sheu, C. J. Pen, G. C. Chi, C. H. Kuo, L. W. Wu, C. Chen, H. Chang, and Y. K. Su, "White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer," IEEE Photon. Technol. Lett., vol. 14, no. 4, pp. 450-452, Apr. 2002. (Pubitemid 34491605)
4. I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, "30% external quantum efficiency from surface textured, thin-film light-emitting diodes," Appl. Phys. Lett., vol. 63, no. 16, pp. 2174-2176, 1993.
5. Y. J. Lee, H. C. Kuo, S. C.Wang, T. C. Hsu, M. H. Hsieh,M. J. Jou, and B. J. Lee, "Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening," IEEE Photon. Technol. Lett., vol. 17, no. 11, pp. 2289-2291, Nov. 2005. (Pubitemid 41594795)
6. Y. J. Lee, H. C. Kuo, T. C. Lu, and S. C. Wang, "High light-extraction GaN-based vertical LEDs with double diffuse surfaces," IEEE J. Quantum Electron., vol. 42, no. 12, pp. 1196-1201, Dec. 2006.
7. Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, and S. C.Wang, "GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror," IEEE Photon. Technol. Lett., vol. 18, no. 5, pp. 724-726, Mar. 1, 2006.
8. J. J.Wierer,M.R.Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantumwell heterostructure light-emitting diodes employing photonic crystal structures," Appl. Phys. Lett., vol. 84, pp. 3885-3887, 2004.
9. T. N. Oder,K.H.Kim, J.Y. Lin, and H. X. Jiang, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett., vol. 84, pp. 466-468, 2004.
10. A. Kaschner, A. Hoffmann, C. Thomsen, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata, and N. Sawaki, "Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN," Appl. Phys. Lett., vol. 74, p. 3320, 1999.
11. J. Holst, A. Kaschner, A. Hoffmann, P. Fischer, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata, and N. Sawaki, "Time-resolved microphotoluminescence of epitaxial laterally overgrown GaN," Appl. Phys. Lett., vol. 75, p. 3647, 1999.