Heterogeneous integration of hexagonal boron nitride on bilayer quasi-free-standing epitaxial graphene and its impact on electrical transport properties

Physica Status Solidi (A) Applications and Materials Science

Volumn 210, Issue 6, 2013, Pages 1062-1070

  Hollander, Matthew J ^a   Agrawal, Ashish ^a   Bresnehan, Michael S ^b   Labella, Michael ^b   Trumbull, Kathleen A ^b   Cavalero, Randal ^b   Snyder, David W ^b   Datta, Suman ^a   Robinson, Joshua A ^b  

^a The Pennsylvania State University   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

bilayers; boron nitride; epitaxial graphene; high k dielectrics

Indexed keywords

BI-LAYER; CHARGED IMPURITY SCATTERINGS; ELECTRICAL TRANSPORT PROPERTIES; EPITAXIAL GRAPHENE; HETEROGENEOUS INTEGRATION; HEXAGONAL BORON NITRIDE (H-BN); HIGH-K DIELECTRIC; SILICON CARBIDE SUBSTRATES;

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GRAPHENE; HAFNIUM OXIDES; IMPURITIES; INTEGRATION; LIGHT SCATTERING; SILICON CARBIDE; TRANSPORT PROPERTIES;

BORON NITRIDE;

EID: 84879221321     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201228683     Document Type: Article

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