A graphene/GaAs near-infrared photodetector enabled by interfacial passivation with fast response and high sensitivity

Journal of Materials Chemistry C

Volumn 3, Issue 18, 2015, Pages 4723-4728

  Luo, Lin Bao ^a   Hu, Han ^a   Wang, Xian He ^a   Lu, Rui ^a   Zou, Yi Feng ^a   Yu, Yong Qiang ^a   Liang, Feng Xia ^a  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; INFRARED DETECTORS; OPTOELECTRONIC DEVICES; PASSIVATION; PHOTODETECTORS; PHOTONS;

BILAYER GRAPHENE; DEVICE PERFORMANCE; HIGH SENSITIVITY; NEAR INFRARED PHOTODETECTORS; RESPONSE RATE; SCHOTTKY JUNCTIONS; SURFACE PASSIVATION; ZERO-BIAS VOLTAGE;

INFRARED DEVICES;

EID: 84929485927     PISSN: 20507534     EISSN: 20507526     Source Type: Journal    
DOI: 10.1039/c5tc00449g     Document Type: Article

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