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Journal of Materials Chemistry C

Volumn 2, Issue 30, 2014, Pages 6104-6110

Flexible photodetectors with single-crystalline GaTe nanowires

(5) Yu, Gang a Liu, Zhe a Xie, Xuming a Ouyang, Xia a Shen, Guozhen a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; FIELD EFFECT TRANSISTORS; NANOWIRES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONS;

CHEMICAL VAPOR DEPOSITION METHODS; EXTERNAL QUANTUM EFFICIENCY; FLEXIBLE PHOTODETECTORS; LIGHT IRRADIATIONS; MECHANICAL FLEXIBILITY; OPTICAL AND ELECTRICAL PROPERTIES; P TYPE SEMICONDUCTOR; SINGLE-CRYSTALLINE;

ELECTRIC PROPERTIES;

EID: 84904194572 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c4tc00917g Document Type: Article

Times cited : (45)

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