Amorphous HgCdTe infrared photoconductive detector with high detectivity above 200 K

Applied Physics Letters

Volumn 99, Issue 11, 2011, Pages

  Wang, Jun ^a,b   Chen, Xiaoshuang ^b   Hu, Weida ^b   Wang, Lin ^b   Lu, Wei ^b   Xu, Faqiang ^a   Zhao, Jun ^c   Shi, Yanli ^c   Ji, Rongbin ^c  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c KUNMING INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DAVIS MODEL; DETECTIVITY; HGCDTE; PHOTOCONDUCTIVE DETECTORS; SI-BASED; TEMPERATURE DEPENDENCE; TRANSPORT PROCESS; UNCOOLED;

DETECTORS; MERCURY COMPOUNDS; PHOTOCONDUCTIVITY;

AMORPHOUS SILICON;

EID: 80053178060     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3638459     Document Type: Article

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