High-performance long-wavelength infrared hgcdte focal plane arrays fabricated on cdsete compliant si substrates

IEEE Transactions on Electron Devices

Volumn 57, Issue 4, 2010, Pages 782-787

  Wijewarnasuriya, Priyalal S ^a   Chen, Yuanping ^a   Brill, Gregory ^a   Zandi, Bahram ^a   Dhar, Nibir K ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

CdSeTe; CdTe; Compliant Si substrates; Focal plane arrays (FPAs); HgCdTe; Infrared (IR) detectors; Long wavelength IR; Molecular beam epitaxy (MBE)

Indexed keywords

2D-ARRAYS; ALTERNATIVE SUBSTRATES; CDTE; CDZNTE SUBSTRATE; COMPLIANT SUBSTRATES; DIFFUSION LIMITED; HGCDTE; HGCDTE FOCAL PLANE ARRAYS; HIGH-QUALITY MATERIALS; LONG WAVELENGTH; LONG-WAVELENGTH INFRARED; LONG-WAVELENGTH IR; PEAK DISTRIBUTION; PHOTOVOLTAIC DEVICES; PIXEL PITCH; ROADMAP; SI SUBSTRATES; SI(211); TERNARY SEMICONDUCTORS; THIRD GENERATION; U.S. ARMY;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CRYSTAL GROWTH; FABRICATION; FOCAL PLANE ARRAYS; FOCUSING; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; RESEARCH LABORATORIES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SILICON; TECHNOLOGICAL FORECASTING;

SUBSTRATES;

EID: 77950297616     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2041511     Document Type: Article

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