A Raman spectroscopy signature for characterizing defective single-layer graphene: Defect-induced I(D)/I(D') intensity ratio by theoretical analysis

Carbon

Volumn 90, Issue , 2015, Pages 53-62

  Jiang, Jie ^a   Pachter, Ruth ^a   Mehmood, Faisal ^a   Islam, Ahmad E ^a   Maruyama, Benji ^a   Boeckl, John J ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; BACKSCATTERING; CALCULATIONS; DEFECT DENSITY; DENSITY FUNCTIONAL THEORY; GAS ADSORPTION; GRAPHENE; OXYGEN; OXYGEN VACANCIES; POINT DEFECTS; SCATTERING PARAMETERS; VACANCIES;

ANALYTICAL ANALYSIS; ANGULAR DEPENDENCE; DEFECT POTENTIALS; ELECTRON DEFECTS; EXPERIMENTAL CHARACTERIZATION; FIRST-PRINCIPLES DENSITY FUNCTIONAL THEORY; OXYGEN ADSORPTION; RAMAN INTENSITIES;

DEFECTS;

EID: 84929337458     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2015.03.049     Document Type: Article

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