Interplay between oxidized monovacancy and nitrogen doping in graphene

Journal of Physical Chemistry C

Volumn 118, Issue 34, 2014, Pages 19795-19805

  Hou, Zhufeng ^a,b   Shu, Da Jun ^a,b   Chai, Guo Liang ^a   Ikeda, Takashi ^c   Terakura, Kiyoyuki ^a,d  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NANJING UNIVERSITY   (China)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

^d JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRONIC STRUCTURE; GRAPHENE; NITROGEN; OXYGEN; POINT DEFECTS; DEFECT DENSITY; DENSITY FUNCTIONAL THEORY; ELECTROLYTIC REDUCTION; OXIDATION;

CHEMICAL GROUP; GRAPHENE SHEETS; NITROGEN CONTENT; NITROGEN-DOPING; OXIDATION DEGREE; OXYGEN REDUCTION REACTION; STABLE CONFIGURATION; STONE-WALES DEFECTS; EFFECT OF OXYGEN; METAL-FREE CATALYSTS;

OXIDATION; NITROGEN;

EID: 84906871717     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp504298p     Document Type: Article

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