The effect of substrate temperature on atomic layer deposited zinc tin oxide

Thin Solid Films

Volumn 586, Issue , 2015, Pages 82-87

  Lindahl, Johan ^a   Hägglund, Carl ^a   Timo Watjen J ^a   Edoff, Marika ^a   Törndahl, Tobias ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

Atomic layer deposition (ALD); Buffer layer; Mixed oxide; Optical band gap; Thin film photovoltaics; Zinc tin oxide (ZTO)

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; BUFFER LAYERS; CRYSTALLITES; ENERGY GAP; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; OPTICAL BAND GAPS; OXIDE FILMS; OXIDE MINERALS; SUBSTRATES; THIN FILMS; TIN METALLOGRAPHY; TIN OXIDES; ZINC METALLOGRAPHY; ZINC OXIDE;

ATOMIC LAYER DEPOSITED; DEPOSITION TEMPERATURES; MIXED OXIDE; QUANTUM CONFINEMENT EFFECTS; SUBSTRATE TEMPERATURE; TEMPERATURE DEPENDENT; THIN FILM PHOTOVOLTAICS; ZINC-TIN-OXIDE (ZTO);

GROWTH RATE;

EID: 84928999288     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2015.04.029     Document Type: Article

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