Measuring thermally induced void growth in conformally filled through-silicon vias (TSVs) by laboratory X-ray microscopy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8324, Issue , 2012, Pages

  Kong, L W ^a,b,c   Lloyd, J R ^a   Liehr, M ^a   Rudack, A C ^b   Arkalgud, S ^b   Diebold, A C ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b SEMATECH   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

Bottom up filled; Conformally filled; Pre existing void; Seamline; Through silicon via; Void growth; X ray tomography

Indexed keywords

BOTTOM UP-FILLED; CONFORMALLY FILLED; PRE-EXISTING VOID; SEAMLINE; THROUGH-SILICON-VIA; VOID GROWTH; X-RAY TOMOGRAPHY;

ANNEALING; INSPECTION; PROCESS CONTROL; UNITS OF MEASUREMENT; X RAY MICROSCOPES;

X RAYS;

EID: 84861052969     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.916599     Document Type: Conference Paper

References (9)

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