MoS2 thin films obtained by a new technique: Solid state reaction between the constituents in thin film form

Journal of Physics and Chemistry of Solids

Volumn 57, Issue 9, 1996, Pages 1363-1369

  Pouzet, J ^a   Hadouda, H ^a   Bernede, J C ^a   Le Ny, R ^a  

^a UNIVERSITÉ DE NANTES   (France)

Author keywords

A. chalcogenides; A. thin films; C. photoelectron spectroscopy; C. X ray diffraction; D. electrical properties

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY MEASUREMENT; ENERGY GAP; FILM PREPARATION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MOLYBDENUM COMPOUNDS; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHALCOGENICIDES; DYNAMIC VACUUM; GRAIN BOUNDARY MODEL; MOLYBDENUM DISULFIDE; SOLID STATE REACTIONS; SULFUR PRESSURE;

SEMICONDUCTING FILMS;

EID: 0030243996     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3697(96)00028-5     Document Type: Article

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