Interface-induced nonswitchable domains in ferroelectric thin films

Nature Communications

Volumn 5, Issue , 2014, Pages

  Han, Myung Geun ^a   Marshall, Matthew S J ^b   Wu, Lijun ^a   Schofield, Marvin A ^a   Aoki, Toshihiro ^c   Twesten, Ray ^d   Hoffman, Jason ^b   Walker, Frederick J ^b   Ahn, Charles H ^b   Zhu, Yimei ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b Yale University   (United States)

^c JEOL USA INC   (United States)

^d GATAN INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITION; ELECTRIC FIELD; ELECTRON; ELECTRONIC EQUIPMENT; FILM; INTERFACE; IRON; OXYGEN; POLARIZATION; SOLAR POWER; THIN SECTION;

ARTICLE; COMPUTER INTERFACE; DIELECTRIC CONSTANT; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRON BEAM; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY COST; EXTERNAL BIAS; FERROELECTRICITY; FILM; POLARIZATION; SOLAR ENERGY; SURFACE PROPERTY;

EID: 84927673282     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms5693     Document Type: Article

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