Direct measurement of electron beam induced currents in p-type silicon

Solid-State Electronics

Volumn 54, Issue 8, 2010, Pages 777-780

  Han, Myung Geun ^a,c   Zhu, Yimei ^c   Sasaki, Katsuhiro ^b   Kato, Takeharu ^a   Fisher, Craig A J ^a   Hirayama, Tsukasa ^a  

^a JAPAN FINE CERAMICS CENTER   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

Carrier transport; EBIC; Semiconductor; Transmission electron microscopy

Indexed keywords

CURRENT VOLTAGE CURVE; DIRECT MEASUREMENT; EBIC; ELECTRON-BEAM-INDUCED CURRENT; EXCESS ELECTRONS; EXPERIMENTAL APPROACHES; HIGH-PRECISION; MINORITY CARRIER; NANO-METER SCALE; P-TYPE SILICON; PROBE CONTACT; RELATIVE DISTANCES; TRANSMISSION ELECTRON MICROSCOPE; TUNGSTEN PROBES;

CARRIER COMMUNICATION; CARRIER TRANSPORT; ELECTRON BEAMS; ELECTRON OPTICS; PROBES; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN;

ELECTRONS;

EID: 77955337009     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.03.008     Document Type: Article

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