-
1
-
-
84864545310
-
Artificial photosynthesis for solar water-splitting
-
Tachibana, Y., Vayssieres, L. & Durrant, J. R. Artificial photosynthesis for solar water-splitting. Nat. Photonics 6, 511-518 (2012).
-
(2012)
Nat. Photonics
, vol.6
, pp. 511-518
-
-
Tachibana, Y.1
Vayssieres, L.2
Durrant, J.R.3
-
2
-
-
84892600394
-
Semiconductor nanowires for artificial photosynthesis
-
Liu, C., Dasgupta, N. P. & Yang, P. Semiconductor nanowires for artificial photosynthesis. Chem. Mater. 26, 415-422 (2014).
-
(2014)
Chem. Mater.
, vol.26
, pp. 415-422
-
-
Liu, C.1
Dasgupta, N.P.2
Yang, P.3
-
3
-
-
57649159482
-
Heterogeneous photocatalyst materials for water splitting
-
Kudo, A. & Miseki, Y. Heterogeneous photocatalyst materials for water splitting. Chem. Soc. Rev. 38, 253-278 (2009).
-
(2009)
Chem. Soc. Rev.
, vol.38
, pp. 253-278
-
-
Kudo, A.1
Miseki, Y.2
-
4
-
-
0011747677
-
Photoelectrochemistry
-
Bard, A. J. Photoelectrochemistry. Science 207, 139-144 (1980).
-
(1980)
Science
, vol.207
, pp. 139-144
-
-
Bard, A.J.1
-
5
-
-
84879988491
-
Z-Scheme water splitting using two different semiconductor photocatalysts
-
Maeda, K. Z-Scheme water splitting using two different semiconductor photocatalysts. ACS Catal. 3, 1486-1503 (2013).
-
(2013)
ACS Catal.
, vol.3
, pp. 1486-1503
-
-
Maeda, K.1
-
6
-
-
78449288259
-
Semiconductor-based photocatalytic hydrogen generation
-
Chen, X., Shen, S., Guo, L. & Mao, S. S. Semiconductor-based photocatalytic hydrogen generation. Chem. Rev. 110, 6503-6570 (2010).
-
(2010)
Chem. Rev.
, vol.110
, pp. 6503-6570
-
-
Chen, X.1
Shen, S.2
Guo, L.3
Mao, S.S.4
-
7
-
-
74549196899
-
Band bowing and band alignment in InGaN alloys
-
Moses, P. G. & Walle, C. G. V. d. Band bowing and band alignment in InGaN alloys. Appl. Phys. Lett. 96, 021908 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 021908
-
-
Moses, P.G.1
Walle, C.G.V.D.2
-
8
-
-
67650711664
-
When group-III nitrides go infrared: New properties and perspectives
-
Wu, J. When group-III nitrides go infrared: new properties and perspectives. J. Appl. Phys. 106, 011101 (2009).
-
(2009)
J. Appl. Phys.
, vol.106
, pp. 011101
-
-
Wu, J.1
-
9
-
-
54949143962
-
Direct hydrogen gas generation by using InGaN epilayers as working electrodes
-
Li, J., Lin, J. Y. & Jiang, H. X. Direct hydrogen gas generation by using InGaN epilayers as working electrodes. Appl. Phys. Lett. 93, 162107 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 162107
-
-
Li, J.1
Lin, J.Y.2
Jiang, H.X.3
-
10
-
-
13444270826
-
Wet etching of GaN, AlN, and SiC: A review
-
Zhuang, D. & Edgar, J. H. Wet etching of GaN, AlN, and SiC: a review. Mater. Sci. Eng. 48, 1-46 (2005).
-
(2005)
Mater. Sci. Eng.
, vol.48
, pp. 1-46
-
-
Zhuang, D.1
Edgar, J.H.2
-
11
-
-
84884948655
-
One-step overall water splitting under visible light using multiband InGaN/GaN nanowire heterostructures
-
Kibria, M. G. et al. One-step overall water splitting under visible light using multiband InGaN/GaN nanowire heterostructures. ACS Nano 7, 7886-7893 (2013).
-
(2013)
ACS Nano
, vol.7
, pp. 7886-7893
-
-
Kibria, M.G.1
-
12
-
-
84858432931
-
Advanced nanoarchitectures for solar photocatalytic applications
-
Kubacka, A., Fernández-García, M. & Colón, G. Advanced nanoarchitectures for solar photocatalytic applications. Chem. Rev. 112, 1555-1614 (2011).
-
(2011)
Chem. Rev.
, vol.112
, pp. 1555-1614
-
-
Kubacka, A.1
Fernández-García, M.2
Colón, G.3
-
13
-
-
0032540476
-
A monolithic photovoltaic-photoelectrochemical device for hydrogen production via water splitting
-
Khaselev, O. & Turner, J. A. A monolithic photovoltaic-photoelectrochemical device for hydrogen production via water splitting. Science 280, 425-427 (1998).
-
(1998)
Science
, vol.280
, pp. 425-427
-
-
Khaselev, O.1
Turner, J.A.2
-
14
-
-
84855454904
-
Nano-photocatalytic materials: Possibilities and challenges
-
Tong, H. et al. Nano-photocatalytic materials: possibilities and challenges. Adv. Mater. 24, 229-251 (2012).
-
(2012)
Adv. Mater.
, vol.24
, pp. 229-251
-
-
Tong, H.1
-
15
-
-
84867452048
-
Band bending in semiconductors: Chemical and physical consequences at surfaces and interfaces
-
Zhang, Z. & Yates, Jr. J. T. Band bending in semiconductors: chemical and physical consequences at surfaces and interfaces. Chem. Rev. 112, 5520-5551 (2012).
-
(2012)
Chem. Rev.
, vol.112
, pp. 5520-5551
-
-
Zhang, Z.1
Yates, J.T.2
-
16
-
-
84899943870
-
Semiconductor composites: Strategies for enhancing charge carrier separation to improve photocatalytic activity
-
Marschall, R. Semiconductor composites: strategies for enhancing charge carrier separation to improve photocatalytic activity. Adv. Funct. Mater. 24, 2421-2440 (2014).
-
(2014)
Adv. Funct. Mater.
, vol.24
, pp. 2421-2440
-
-
Marschall, R.1
-
17
-
-
57049092779
-
Surface potential of n- and p-type GaN measured by Kelvin force microscopy
-
Barbet, S. et al. Surface potential of n- and p-type GaN measured by Kelvin force microscopy. Appl. Phys. Lett. 93, 212107 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 212107
-
-
Barbet, S.1
-
18
-
-
79958819646
-
Wafer-level photocatalytic water splitting on GaN nanowire arrays grown by molecular beam epitaxy
-
Wang, D. et al. Wafer-level photocatalytic water splitting on GaN nanowire arrays grown by molecular beam epitaxy. Nano Lett. 11, 2353-2357 (2011).
-
(2011)
Nano Lett.
, vol.11
, pp. 2353-2357
-
-
Wang, D.1
-
19
-
-
84901047199
-
On the carrier injection efficiency and thermal property of InGaN/GaN axial nanowire light emitting diodes
-
Zhang, S. et al. On the carrier injection efficiency and thermal property of InGaN/GaN axial nanowire light emitting diodes. IEEE J. Quant. Electron. 50, 483-490 (2014).
-
(2014)
IEEE J. Quant. Electron.
, vol.50
, pp. 483-490
-
-
Zhang, S.1
-
20
-
-
84897889809
-
Semiconductor photocatalysts for water oxidation: Current status and challenges
-
Yang, L., Zhou, H., Fan, T. & Zhang, D. Semiconductor photocatalysts for water oxidation: current status and challenges. Phys. Chem. Chem. Phys. 16, 6810-6826 (2014).
-
(2014)
Phys. Chem. Chem. Phys.
, vol.16
, pp. 6810-6826
-
-
Yang, L.1
Zhou, H.2
Fan, T.3
Zhang, D.4
-
21
-
-
84899886993
-
Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting
-
Kibria, M. G. et al. Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting. Nat. Commun. 5, 3825 (2014).
-
(2014)
Nat. Commun.
, vol.5
, pp. 3825
-
-
Kibria, M.G.1
-
22
-
-
84880175033
-
Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
-
Fernández-Garrido, S. et al. Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy. Nano Lett. 13, 3274-3280 (2013).
-
(2013)
Nano Lett.
, vol.13
, pp. 3274-3280
-
-
Fernández-Garrido, S.1
-
23
-
-
79955901965
-
p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111)
-
Nguyen, H. P. T. et al. p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111). Nano Lett. 11, 1919-1924 (2011).
-
(2011)
Nano Lett.
, vol.11
, pp. 1919-1924
-
-
Nguyen, H.P.T.1
-
24
-
-
34047256216
-
Critical thickness calculations for InGaN/GaN
-
Holec, D., Costa, P. M. F. J., Kappers, M. J. & Humphreys, C. J. Critical thickness calculations for InGaN/GaN. J. Cryst. Growth 303, 314-317 (2007).
-
(2007)
J. Cryst. Growth
, vol.303
, pp. 314-317
-
-
Holec, D.1
Costa, P.M.F.J.2
Kappers, M.J.3
Humphreys, C.J.4
-
25
-
-
79955725059
-
Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy
-
Goodman, K. D. et al. Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy. J. Appl. Phys. 109, 084336 (2011).
-
(2011)
J. Appl. Phys.
, vol.109
, pp. 084336
-
-
Goodman, K.D.1
-
26
-
-
84887837931
-
p-Type InN nanowires
-
Zhao, S. et al. p-Type InN nanowires. Nano Lett. 13, 5509-5513 (2013).
-
(2013)
Nano Lett.
, vol.13
, pp. 5509-5513
-
-
Zhao, S.1
-
27
-
-
84863825885
-
Water dissociation at the GaN (1010) surface: Structure, dynamics and surface acidity
-
Wang, J., Pedroza, L. S., Poissier, A. & Fernández-Serra, M. V. Water dissociation at the GaN (1010) surface: structure, dynamics and surface acidity. J. Phys. Chem. C 116, 14382-14389 (2012).
-
(2012)
J. Phys. Chem. C
, vol.116
, pp. 14382-14389
-
-
Wang, J.1
Pedroza, L.S.2
Poissier, A.3
Fernández-Serra, M.V.4
-
28
-
-
77956161317
-
Photocatalytic water oxidation at the GaN (1010) - Water interface
-
Shen, X. et al. Photocatalytic water oxidation at the GaN (1010) - water interface. J. Phys. Chem. C 114, 13695-13704 (2010).
-
(2010)
J. Phys. Chem. C
, vol.114
, pp. 13695-13704
-
-
Shen, X.1
-
29
-
-
34250883031
-
Photocatalytic overall water splitting on gallium nitride powder
-
Maeda, K., Teramura, K., Saito, N., Inoue, Y. & Domen, K. Photocatalytic overall water splitting on gallium nitride powder. Bull. Chem. Soc. Jpn. 80, 1004-1010 (2007).
-
(2007)
Bull. Chem. Soc. Jpn.
, vol.80
, pp. 1004-1010
-
-
Maeda, K.1
Teramura, K.2
Saito, N.3
Inoue, Y.4
Domen, K.5
-
30
-
-
33645027408
-
Photocatalyst releasing hydrogen from water
-
Maeda, K. et al. Photocatalyst releasing hydrogen from water. Nature 440, 295-295 (2006).
-
(2006)
Nature
, vol.440
, pp. 295-295
-
-
Maeda, K.1
-
31
-
-
36049051453
-
Effects of divalent metal ion (Mg2+, Zn2+ and Be2+) doping on photocatalytic activity of ruthenium oxide-loaded gallium nitride for water splitting
-
Arai, N. et al. Effects of divalent metal ion (Mg2+, Zn2+ and Be2+) doping on photocatalytic activity of ruthenium oxide-loaded gallium nitride for water splitting. Catal. Today 129, 407-413 (2007).
-
(2007)
Catal. Today
, vol.129
, pp. 407-413
-
-
Arai, N.1
-
32
-
-
20144386901
-
RuO2-loaded β-Ge3N4 as a non-oxide photocatalyst for overall water splitting
-
Sato, J. et al. RuO2-loaded β-Ge3N4 as a non-oxide photocatalyst for overall water splitting. J. Am. Chem. Soc. 127, 4150-4151 (2005).
-
(2005)
J. Am. Chem. Soc.
, vol.127
, pp. 4150-4151
-
-
Sato, J.1
-
33
-
-
0037445013
-
Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy
-
Kumakura, K., Makimoto, T. & Kobayashi, N. Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy. J. Appl. Phys. 93, 3370-3375 (2003).
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 3370-3375
-
-
Kumakura, K.1
Makimoto, T.2
Kobayashi, N.3
-
34
-
-
0038172513
-
Universal alignment of hydrogen levels in semiconductors, insulators and solutions
-
Van de Walle, C. G. & Neugebauer, J. Universal alignment of hydrogen levels in semiconductors, insulators and solutions. Nature 423, 626-628 (2003).
-
(2003)
Nature
, vol.423
, pp. 626-628
-
-
Van De Walle, C.G.1
Neugebauer, J.2
-
35
-
-
0000658390
-
Limiting and realizable efficiencies of solar photolysis of water
-
Bolton, J. R., Strickler, S. J. & Connolly, J. S. Limiting and realizable efficiencies of solar photolysis of water. Nature 316, 495-500 (1985).
-
(1985)
Nature
, vol.316
, pp. 495-500
-
-
Bolton, J.R.1
Strickler, S.J.2
Connolly, J.S.3
-
36
-
-
0030218236
-
Physical chemistry of semiconductor - Liquid interfaces
-
Nozik, A. J. & Memming, R. Physical chemistry of semiconductor - liquid interfaces. J. Phys. Chem. 100, 13061-13078 (1996).
-
(1996)
J. Phys. Chem.
, vol.100
, pp. 13061-13078
-
-
Nozik, A.J.1
Memming, R.2
-
37
-
-
43049085844
-
Effect of post-calcination on photocatalytic activity of (Ga1 - xZnx)(N1 - xOx) solid solution for overall water splitting under visible light
-
Maeda, K., Teramura, K. & Domen, K. Effect of post-calcination on photocatalytic activity of (Ga1 - xZnx)(N1 - xOx) solid solution for overall water splitting under visible light. J. Catal. 254, 198-204 (2008).
-
(2008)
J. Catal.
, vol.254
, pp. 198-204
-
-
Maeda, K.1
Teramura, K.2
Domen, K.3
-
38
-
-
84879106363
-
A fully integrated nanosystem of semiconductor nanowires for direct solar water splitting
-
Liu, C., Tang, J., Chen, H. M., Liu, B. & Yang, P. A fully integrated nanosystem of semiconductor nanowires for direct solar water splitting. Nano Lett. 13, 2989-2992 (2013).
-
(2013)
Nano Lett.
, vol.13
, pp. 2989-2992
-
-
Liu, C.1
Tang, J.2
Chen, H.M.3
Liu, B.4
Yang, P.5
-
39
-
-
84876374589
-
An autonomous photosynthetic device in which all charge carriers derive from surface plasmons
-
Mubeen, S. et al. An autonomous photosynthetic device in which all charge carriers derive from surface plasmons. Nat. Nanotechnol. 8, 247-251 (2013).
-
(2013)
Nat. Nanotechnol.
, vol.8
, pp. 247-251
-
-
Mubeen, S.1
-
40
-
-
80555150640
-
Wireless solar water splitting using silicon-based semiconductors and earth-abundant catalysts
-
Reece, S. Y. et al. Wireless solar water splitting using silicon-based semiconductors and earth-abundant catalysts. Science 334, 645-648 (2011).
-
(2011)
Science
, vol.334
, pp. 645-648
-
-
Reece, S.Y.1
-
41
-
-
84891830926
-
Efficient solar water-splitting using a nanocrystalline CoO photocatalyst
-
Liao, L. et al. Efficient solar water-splitting using a nanocrystalline CoO photocatalyst. Nat. Nanotechnol. 9, 69-73 (2014).
-
(2014)
Nat. Nanotechnol.
, vol.9
, pp. 69-73
-
-
Liao, L.1
-
42
-
-
84898989949
-
Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis
-
Dahal, R., Pantha, B. N., Li, J., Lin, J. Y. & Jiang, H. X. Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis. Appl. Phys. Lett. 104, 143901 (2014).
-
(2014)
Appl. Phys. Lett.
, vol.104
, pp. 143901
-
-
Dahal, R.1
Pantha, B.N.2
Li, J.3
Lin, J.Y.4
Jiang, H.X.5
-
43
-
-
84884248581
-
Highly stable photoelectrochemical water splitting and hydrogen generation using a double-band InGaN/GaN core/shell nanowire photoanode
-
AlOtaibi, B. et al. Highly stable photoelectrochemical water splitting and hydrogen generation using a double-band InGaN/GaN core/shell nanowire photoanode. Nano Lett. 13, 4356-4361 (2013).
-
(2013)
Nano Lett.
, vol.13
, pp. 4356-4361
-
-
AlOtaibi, B.1
-
44
-
-
46849102740
-
Photocatalysis using GaN nanowires
-
Jung, H. S. et al. Photocatalysis using GaN nanowires. ACS Nano 2, 637-642 (2008).
-
(2008)
ACS Nano
, vol.2
, pp. 637-642
-
-
Jung, H.S.1
-
45
-
-
46649103658
-
Stable response to visible light of InGaN photoelectrodes
-
Luo, W. et al. Stable response to visible light of InGaN photoelectrodes. Appl. Phys. Lett. 92, 262110 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 262110
-
-
Luo, W.1
-
46
-
-
84858241162
-
Si/InGaN core/shell hierarchical nanowire arrays and their photoelectrochemical properties
-
Hwang, Y. J., Wu, C. H., Hahn, C., Jeong, H. E. & Yang, P. Si/InGaN core/shell hierarchical nanowire arrays and their photoelectrochemical properties. Nano Lett. 12, 1678-1682 (2012).
-
(2012)
Nano Lett.
, vol.12
, pp. 1678-1682
-
-
Hwang, Y.J.1
Wu, C.H.2
Hahn, C.3
Jeong, H.E.4
Yang, P.5
-
47
-
-
56249113777
-
Surface states and origin of the Fermi level pinning on nonpolar GaN (1100) surfaces
-
Ivanova, L. et al. Surface states and origin of the Fermi level pinning on nonpolar GaN (1100) surfaces. Appl. Phys. Lett. 93, 192110 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 192110
-
-
Ivanova, L.1
-
48
-
-
21544435375
-
Metal contacts to gallium nitride
-
Foresi, J. S. & Moustakas, T. D. Metal contacts to gallium nitride. Appl. Phys. Lett. 62, 2859-2861 (1993).
-
(1993)
Appl. Phys. Lett.
, vol.62
, pp. 2859-2861
-
-
Foresi, J.S.1
Moustakas, T.D.2
-
49
-
-
4944251364
-
Experimental determination of valence band maxima for SrTiO3, TiO2, and SrO and the associated valence band offsets with Si(001)
-
Chambers, S. A., Droubay, T., Kaspar, T. C. & Gutowski, M. Experimental determination of valence band maxima for SrTiO3, TiO2, and SrO and the associated valence band offsets with Si(001). J. Vac. Sci. Technol. B 22, 2205-2215 (2004).
-
(2004)
J. Vac. Sci. Technol. B
, vol.22
, pp. 2205-2215
-
-
Chambers, S.A.1
Droubay, T.2
Kaspar, T.C.3
Gutowski, M.4
|