Surface and interfacial study of half cycle atomic layer deposited Al2O3 on black phosphorus

Microelectronic Engineering

Volumn 147, Issue , 2015, Pages 1-4

  Zhu, Hui ^a   Qin, Xiaoye ^a   Azcatl, Angelica ^a   Addou, Rafik ^a   McDonnell, Stephen ^a   Ye, Peide D ^b   Wallace, Robert M ^a  

^a The University of Texas at Dallas   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

2D semiconductors; ALD; Black phosphorus; Black P; Half cycle; Phosphorene

Indexed keywords

ALUMINA; ALUMINUM OXIDE; NUCLEATION; OXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ALD GROWTH; ATOMIC LAYER DEPOSITED; GROWTH BEHAVIOR; HALF CYCLE; INTERFACIAL STUDY; MOST LIKELY; PHOSPHORENE; SITU X-RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

EID: 84927166275     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2015.04.014     Document Type: Article

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