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Volumn 15, Issue 4, 2015, Pages 2645-2651

Van der Waals Epitaxial Growth of Atomically Thin Bi2Se3 and Thickness-Dependent Topological Phase Transition

Author keywords

midgap states; Moir pattern; quantum capacitance; Topological insulators; topological phase transition; van der Waals epitaxy

Indexed keywords

BORON NITRIDE; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; HETEROJUNCTIONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; LATTICE MISMATCH; OPTOELECTRONIC DEVICES; QUANTUM THEORY; SELENIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; TOPOLOGY; TRANSMISSION ELECTRON MICROSCOPY; VAN DER WAALS FORCES;

EID: 84926678897     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b00247     Document Type: Review
Times cited : (76)

References (36)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.