Preparation of γ-Al2O3 films by laser chemical vapor deposition

Applied Surface Science

Volumn 340, Issue , 2015, Pages 160-165

  Gao, Ming ^a   Ito, Akihiko ^a   Goto, Takashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Film; Laser CVD; Microstructure; Al2O3; Al2O3

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CARBON DIOXIDE; CARBON DIOXIDE LASERS; CHEMICAL VAPOR DEPOSITION; FILMS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; INDIUM ALLOYS; MICROSTRUCTURE; NEODYMIUM ALLOYS; NEODYMIUM LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; YTTRIUM ALLOYS; YTTRIUM ALUMINUM GARNET;

COLUMNAR STRUCTURES; DEPOSITION CONDITIONS; GAS SPECIES; LASER CHEMICAL VAPOR DEPOSITION; LASER CVD; LASER WAVELENGTH; ND : YAG LASERS; TOTAL PRESSURE;

FILM PREPARATION;

EID: 84926166506     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2015.02.196     Document Type: Article

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