Low temperature deposition of silicon nitride using Si3Cl8

Thin Solid Films

Volumn 577, Issue , 2015, Pages 114-118

  Riedel, Stefan ^a   Sundqvist, Jonas ^c   Gumprecht, Thomas ^b  

^a FRAUNHOFER INSTITUTE FOR PHOTONIC MICROSYSTEMS   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^c LUND UNIVERSITY   (Sweden)

Author keywords

Atomic layer deposition; MOS capacitor; Silicon nitride

Indexed keywords

AMMONIA; ASPECT RATIO; ATOMIC LAYER DEPOSITION; CAPACITANCE; CHARGE TRAPPING; CHEMICAL VAPOR DEPOSITION; MOS CAPACITORS; NITRIDES; SILICON NITRIDE; TEMPERATURE; THIN FILMS;

C-V HYSTERESIS; CAPACITANCE VOLTAGE MEASUREMENTS; DEPOSITED FILMS; DEPOSITION TEMPERATURES; GROWTH MECHANISMS; HIGH ASPECT RATIO; LOW-TEMPERATURE DEPOSITION; STEP COVERAGE;

CHLORINE COMPOUNDS;

EID: 84926153655     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2015.01.045     Document Type: Article

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