Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals

Advanced Materials Interfaces

Volumn 1, Issue 2, 2014, Pages

  Kůsová, Kateřina ^a   Hapala, Prokop ^a   Valenta, Jan ^b   Jelínek, Pavel ^a   Cibulka, Ondřej ^a   Ondič, Lukáš ^a   Pelant, Ivan ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b CHARLES UNIVERSITY   (Czech Republic)

Author keywords

direct bandgap; photoluminescence; silicon nanocrystals; strain engineering; surface termination

Indexed keywords

ENERGY GAP; HYDROSTATIC PRESSURE; MICROELECTRONICS; NANOCRYSTALS; PHOTOLUMINESCENCE; STRAINED SILICON; TENSILE STRAIN;

ABSORBANCE SPECTRUM; DIPOLE-ALLOWED TRANSITIONS; EXTERNAL HYDROSTATIC PRESSURES; PHOTON EMISSION RATE; SILICON NANOCRYSTALS; STRAIN ENGINEERING; SURFACE TERMINATION; TENSILE STRAINED SILICON;

SILICON WAFERS;

EID: 84925085893     PISSN: None     EISSN: 21967350     Source Type: Journal    
DOI: 10.1002/admi.201300042     Document Type: Article

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