Size-dependent visible absorption and fast photoluminescence decay dynamics from freestanding strained silicon nanocrystals

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Dhara, Soumen ^a   Giri, Pk ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOCRYSTALS; PHONONS; PHOTOLUMINESCENCE; DYNAMICS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

COMBINED EFFECT; COMPETING EFFECTS; DIRECT BAND GAP; EXPONENTIAL DECAYS; NANOSECOND TIME SCALE; PHONON CONFINEMENT; PHOTOLUMINESCENCE DECAY; STRAIN-INDUCED DISLOCATIONS; AVERAGE SIZE; DECAY DYNAMICS; PHONON MODE; PL EMISSION; SI NANOCRYSTAL; STRAINED SILICON; STRAINED-SI; TIME-SCALES;

STRAINED SILICON; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 84255182791     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-320     Document Type: Article

References (31)

1. de Boer WDAM, Timmerman D, Dohnalova K, Yassievich IN, Zhang H, Buma WJ, Gregorkiewicz T: Red spectral shift and enhanced quantum efficiency inphonon-free photoluminescence from silicon nanocrystals. Nat Nanotechnol 2010, 5:878-884.
2. Pavesi L, Negro LD, Mazzoleni FG, Priolo F: Optical gain in silicon nanocrystals. Nature 2000, 408:440-444.
3. Cullis AG, Canham LT: Visible light emission due to quantum size effects in highly porous crystalline silicon. Nature 1991, 353:335-338.
4. Godefroo S, Hayne M, Jivanescu M, Stesmans A, Zacharias M, Lebedev OI, Tendeloo GV, Moschalkov VV: Classification and control of the origin of photoluminescence from Si nanocrystals. Nat Nanotechnol 2008, 3:174-178.
5. Ledoux G, Guillois O, Porterat D, Reynaud C, Huisken F, Kohn B, Paillard V: Photoluminescence properties of silicon nanocrystals as a function of their size. Phys Rev B 2000, 62:15942-15951.
6. Peng XH, Ganti S, Alizadeh A, Sharma P, Kumar SK, Nayak SK: Strain-engineered photoluminescence of silicon nanoclusters. Phys Rev B 2006, 74:035339.
7. Lioudakis E, Antoniou A, Othonos A, Christofides C, Nassiopoulou AG, Lioutas CB, Frangis N: The role of surface vibrations and quantum confinement effect to the optical properties of very thin nanocrystalline silicon films. J Appl Phys 2007, 102:083534.
8. Lyons DM, Ryan KM, Morris MA, Holmes JD: Tailoring the optical properties of silicon nanowire arrays through strain. Nano Lett 2002, 2:811-816.
9. Thean A, Leburton JP: Strain effect in large silicon nanocrystal quantum dots. Appl Phys Lett 2001, 79:1030-1032.
10. Wu XL, Xue FS: Optical transition in discrete levels of Si quantum dots. Appl Phys Lett 2004, 84:2808-2810.
11. Zheng F, Choi WK, Lin F, Tripathy S, Zhang JX: Stress tuning of Ge nanocrystals embedded in dielectrics. J Phys Chem C 2008, 112:9223-9228.
12. Ray M, Sarkar S, Bandyopadhyay NR, Hossaion SM, Pramanik AK: Silicon and silicon oxide core-shell nanoparticles: structural and photoluminescence characteristics. J Appl Phys 2009, 105:074301.
13. Ray M, Hossaion SM, Kile RF, Banerjee K, Ghosh S: Free standing luminescent silicon quantum dots: evidence of quantum confinement and defect related transitions. Nanotechnology 2010, 21:50560.
14. Ungar T, Borbely A: The effect of dislocation contrast on x-ray line broadening: a new approach to line profile analysis. Appl Phys Lett 1996, 69:3173-3175.
15. Dhara S, Giri PK: Size dependent anisotropic strain and optical properties of strained Si nanocrystals. J Nanosci Nanotechnol 2011.
16. Giri PK: Strain analysis on freestanding germanium nanocrystals. J Phys D Appl Phys 2009, 42:245402.
17. Piscanec S, Cantoro M, Ferrari AC, Zapien JA, Lifshitz Y, Lee ST, Hofmann S, Robertson J: Raman spectroscopy of silicon nanowires. Phys Rev B 2003, 68:241312(R).
18. Konstantinovic MJ, Bersier S, Wang X, Hayne M, Lievens P, Silverans RE, Moshchalkov VV: Raman scattering in cluster-deposited nanogranular silicon films. Phys Rev B 2002, 66:161311(R).
19. Lioudakis E, Othonos A, Nassiopoulou AG, Lioutas CB, Frangis N: Influence of grain size on ultrafast carrier dynamics in thin nanocrystalline silicon films. Appl Phys Lett 2007, 90:191114.
20. Alonso MI, Mercus IC, Garriga M, Goni AR: Evidence of quantum confinement effects on interband optical transitions in Si nanocrystals. Phys Rev B 2010, 82:045302.
21. Lioudakis E, Othonos A, Nassiopoulou AG: Ultrafast transient photoinduced absorption in silicon nanocrystals: coupling of oxygen-related states to quantized sublevels. Appl Phys Lett 2007, 90:171103.
22. Fojtik A, Henglein A: Surface chemistry of luminescent colloidal silicon nanoparticles. J Phys Chem B 2006, 110:1994-1998.
23. Hadjisavvas G, Kelires PC: Structure and energetics of Si nanocrystals embedded in a-SiO2. Phys Rev Lett 2004, 93:226104.
24. Wilcoxon JP, Samara GA, Provencio PN: Optical and electronic properties of Si nanoclusters synthesized in inverse micelles. Phys Rev B 1999, 60:2704-2714.
25. Guillois O, Herlin-Boime N, Reynaud C, Ledoux G, Huisken F: Photoluminescence decay dynamics of noninteracting silicon nanocrystals. J Appl Phys 2004, 95:3677-3782.
26. Meier C, Gondorf A, Lüttjohann S, Lorke A, Wiggers H: Silicon nanoparticles: absorption, emission, and the nature of the electronic bandgap. J Appl Phys 2007, 101:103112.
27. Bustrarret E, Mihalcescu I, Ligeon M, Romestain R, Vial JC, Madeore F: Comparison of room temperature photoluminescence decays in anodically oxidized crystalline and X-ray-amorphous porous silicon. J Lumin 1993, 57:105-109.
28. Mihalcescu I, Vial JC, Romestain R: Absence of carrier hopping in porous silicon. Phys Rev Lett 1998, 80:3392-3395.
29. Dhara S, Lu CY, Nair KGM, Chen KH, Chen CP, Huang YF, David C, Chen LC, Raj B: Mechanism of bright red emission in Si nanoclusters. Nanotechnology 2008, 19:395401.
30. x nanostructures. Phys Rev B 1996, 54:5029-5037.
31. Othonos A, Lioudakis E, Nassiopoulou AG: Surface-related states in oxidized silicon nanocrystals enhance carrier relaxation and inhibit Auger recombination. Nanoscale Res Lett 2008, 3:315-320.