SCOPUS 정보 검색 플랫폼

Volumn 117, Issue 11, 2015, Pages

Acceptors in ZnO

(9) McCluskey, Matthew D a Corolewski, Caleb D a Lv, Jinpeng a Tarun, Marianne C a Teklemichael, Samuel T a Walter, Eric D b Grant Norton, M c Harrison, Kale W c Ha, Su c

a WASHINGTON STATE UNIVERSITY (United States)

b PACIFIC NORTHWEST NATIONAL LABORATORY (United States)

c Washington State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

II-VI SEMICONDUCTORS; LITHIUM COMPOUNDS; MAGNETIC SEMICONDUCTORS; MOLYBDENUM OXIDE; NANOCRYSTALS; OXIDE MINERALS; PARAMAGNETIC RESONANCE; POINT DEFECTS; VALENCE BANDS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

ACCEPTOR LEVELS; EXPERIMENTAL EVIDENCE; HOLE CONDUCTION; PHOTOLUMINESCENCE PEAK; VALENCE-BAND MAXIMUMS; ZINC OXIDE (ZNO); ZN VACANCIES; ZNO NANOCRYSTAL;

OXIDE SEMICONDUCTORS;

EID: 84924943215 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4913827 Document Type: Conference Paper

Times cited : (59)

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