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Organic Electronics

Volumn 21, Issue , 2015, Pages 132-137

Ozone oxidation methods for aluminum oxide formation: Application to low-voltage organic transistors

(7) Gupta, S a,e Hannah, S a Watson, C P b Sutta P c Pedersen, R H d Gadegaard, N d Gleskova, H a

a UNIVERSITY OF STRATHCLYDE (United Kingdom)

b BANGOR UNIVERSITY (United Kingdom)

c UNIVERSITY OF WEST BOHEMIA (Czech Republic)

d UNIVERSITY OF GLASGOW (United Kingdom)

e EPFL (Switzerland)

Author keywords

Aluminum oxide; FTIR; Organic thin film transistors; Ozone oxidation; XPS

Indexed keywords

ALUMINA; ATMOSPHERIC PRESSURE; ELECTRIC DISCHARGES; OXIDATION; OZONE; OZONE LAYER; PERMITTIVITY; POWER TRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON IMPURITIES; FTIR; HIGH-VOLTAGE DISCHARGES; ORGANIC THIN FILM TRANSISTORS; ORGANIC TRANSISTOR; OZONE OXIDATION; RELATIVE PERMITTIVITY; SUBSURFACE OXYGEN;

ALUMINUM OXIDE;

EID: 84924614604 PISSN: 15661199 EISSN: None Source Type: Journal
DOI: 10.1016/j.orgel.2015.03.007 Document Type: Article

Times cited : (23)

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