Theoretical study of phosphorene tunneling field effect transistors

Applied Physics Letters

Volumn 106, Issue 8, 2015, Pages

  Chang, Jiwon ^a   Hobbs, Chris ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ENERGY GAP; MONOLAYERS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS;

ANISOTROPIC BAND STRUCTURE; DEVICE PERFORMANCE; QUANTUM TRANSPORT SIMULATIONS; SUBTHRESHOLD SLOPE; THEORETICAL STUDY; TRANSPORT DIRECTION; TUNNELING FIELD-EFFECT TRANSISTORS; TWO DIMENSIONAL (2 D);

FIELD EFFECT TRANSISTORS;

EID: 84924080261     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4913842     Document Type: Article

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