Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

Applied Surface Science

Volumn 330, Issue , 2015, Pages 405-410

  Yeh, T C ^a,b   Zhu, Q ^a   Buchholz, D B ^a   Martinson, A B ^b   Chang, R P H ^a   Mason, T O ^a  

^a Northwestern University   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Amorphous; Kelvin probe; TCO; Transparent conducting oxides; Work function

Indexed keywords

AMORPHOUS MATERIALS; ATOMIC LAYER DEPOSITION; CRYSTALLINE MATERIALS; II-VI SEMICONDUCTORS; PROBES; PULSED LASER DEPOSITION; SURFACE DEFECTS; TRANSPARENT CONDUCTING OXIDES; WORK FUNCTION; ZINC OXIDE;

CRYSTALLINE COUNTERPART; DEFECT MECHANISMS; DEPOSITION PARAMETERS; FACILE MODIFICATIONS; KELVIN PROBE; NEAR SURFACES; TECHNOLOGICAL APPLICATIONS; UV/OZONE TREATMENT;

TIN OXIDES;

EID: 84924049197     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2015.01.026     Document Type: Article

References (24)

1. M.P. Taylor, D.W. Readey, M.F.A.M. van Hest, C.W. Teplin, J.L. Alleman, M.S. Dabney, L.M. Gedvilas, B.M. Keyes, B. To, J.D. Perkins, and D.S. Ginley The remarkable thermal stability of amorphous In-Zn-O transparent conductors Adv. Funct. Mater. 18 20 2008 3169 3178
2. K. Ellmer Past achievements and future challenges in the development of optically transparent electrodes Nat. Photonics 6 12 2012 809 817
3. M. Kumar, A.K. Sigdel, T. Gennett, J.J. Berry, J.D. Perkins, D.S. Ginley, and C.E. Packard Optimizing amorphous indium zinc oxide film growth for low residual stress and high electrical conductivity Appl. Surf. Sci. 283 2013 65 73
4. 2 film probed by X-ray absorption spectroscopy Appl. Phys. Lett. 103 3 2013 031913
5. C. Lee, W. Lee, H. Kim, and H.W. Kim Influence of annealing atmosphere on the structure, resistivity and transmittance of InZnO thin films Ceram. Int. 34 4 2008 1089 1092
6. R. Martins, P. Barquinha, A. Pimentel, L. Pereira, and E. Fortunato Transport in high mobility amorphous wide band gap indium zinc oxide films Phys. Status Solidi 202 9 2005 R95 R97
7. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature 432 7016 2004 488 492
8. A. Klein, C. Körber, A. Wachau, F. Säuberlich, Y. Gassenbauer, S.P. Harvey, D.E. Proffit, and T.O. Mason Transparent conducting oxides for photovoltaics: manipulation of fermi level, work function and energy band alignment Materials (Basel) 3 11 2010 4892 4914
9. H. Ishii, K. Sugiyama, E. Ito, and K. Seki Energy level alignment and interfacial electronic structures at organic/metal and organic/organic interfaces Adv. Mater. 11 8 1999 605 625
10. M.F. Lo, T.W. Ng, T.Z. Liu, V.A.L. Roy, S.L. Lai, M.K. Fung, C.S. Lee, and S.T. Lee Limits of open circuit voltage in organic photovoltaic devices Appl. Phys. Lett. 96 11 2010 113303
11. M.C. Scharber, D. Mühlbacher, M. Koppe, P. Denk, C. Waldauf, A.J. Heeger, and C.J. Brabec Design rules for donors in bulk-heterojunction solar cells - towards 10% energy-conversion efficiency Adv. Mater. 18 6 2006 789 794
12. B. Rand, D. Burk, and S. Forrest Offset energies at organic semiconductor heterojunctions and their influence on the open-circuit voltage of thin-film solar cells Phys. Rev. B 75 11 2007 115327
13. E. Fortunato, A. Pimentel, A. Goncalves, A. Marques, and R. Martins High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature Thin Solid Films 2 2006 104 107
14. S.B. Darling, and F. You The case for organic photovoltaics RSC Adv. 3 2013 17633 17648
15. E. Fortunato, D. Ginley, H. Hosono, and D.C. Paine Transparent conducting oxides for photovoltaics MRS Bull. 32 March 2007 242 247
16. B.P. Singh, R. Kumar, A. Kumar, J. Gaur, S.P. Singh, and R.C. Tyagi Effect of annealing on properties of transparent conducting tin oxide films deposited by thermal evaporation Indian J. Pure Ap. Phys. 51 8 2013 558 562
17. Q. Zhu Physical Properties and Local Structures of Amorphous Zn-Sn-O and Amorphous In-Ga-O Films 2013 Northwestern University PhD dissertation
18. J.S. Kim, B. Lägel, E. Moons, N. Johansson, I.D. Baikie, W.R. Salaneck, R.H. Friend, and F. Cacialli Kelvin probe and ultraviolet photoemission measurements of indium tin oxide work function: a comparison Synth. Met. 111 2000 311 314
19. D.E. Proffit, S.P. Harvey, A. Klein, R. Schafranek, J.D. Emery, D.B. Buchholz, R.P.H. Chang, M.J. Bedzyk, and T.O. Mason Surface studies of crystalline and amorphous Zn-In-Sn-O transparent conducting oxides Thin Solid Films 520 17 2012 5633 5639
20. G.S. Heo, Y. Matsumoto, I.G. Gim, H.K. Lee, J.W. Park, and T.W. Kim Transparent conducting amorphous Zn-In-Sn-O anode for flexible organic light-emitting diodes Solid State Commun. 150 3-4 2010 223 226
21. C.W. Ow-Yang, H. Yeom, and D.C. Paine Fabrication of transparent conducting amorphous Zn-Sn-In-O thin films by direct current magnetron sputtering Thin Solid Films 516 10 2008 3105 3111
22. M. Alaf, M.O. Guler, D. Gultekin, M. Uysal, A. Alp, and H. Akbulut Effect of oxygen partial pressure on the microstructural and physical properties on nanocrystalline tin oxide films grown by plasma oxidation after thermal deposition from pure Sn targets Vacuum 83 2 2008 292 301
23. G. Gonçalves, P. Barquinha, L. Pereira, N. Franco, E. Alves, R. Martins, and E. Fortunato High mobility a-IGO films produced at room temperature and their application in TFTs Electrochem. Solid-State Lett. 13 1 2010 H20
24. S. Lee, and D.C. Paine Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation Appl. Phys. Lett. 102 5 2013 052101