Thickness modulated MoS2 grown by chemical vapor deposition for transparent and flexible electronic devices

Applied Physics Letters

Volumn 106, Issue 1, 2015, Pages

  Park, Juhong ^a   Choudhary, Nitin ^a   Smith, Jesse ^a   Lee, Gilsik ^b   Kim, Moonkyung ^c   Choi, Wonbong ^a  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b The University of Texas at Dallas   (United States)

^c Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; DEPOSITION; LINEAR TRANSFORMATIONS; MOLYBDENUM COMPOUNDS; OPTICAL PROPERTIES; SILICON WAFERS;

AMORPHOUS SILICON (A-SI); CRITICAL THICKNESS; ELECTRICAL MOBILITY; FLEXIBLE ELECTRONIC DEVICES; HIGH CRYSTALLINITY; OPTICAL TRANSPARENCY; PHOTOLUMINESCENCE ANALYSIS; TWO DIMENSIONAL (2 D);

FLEXIBLE ELECTRONICS;

EID: 84923815001     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4905476     Document Type: Article

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